參數(shù)資料
型號(hào): 2SB1389
元件分類: 功率晶體管
英文描述: 4 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
封裝: TO-220FM, 3 PIN
文件頁數(shù): 4/7頁
文件大?。?/td> 144K
代理商: 2SB1389
2SB1389
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
–60
V
Collector to emitter voltage
V
CEO
–60
V
Emitter to base voltage
V
EBO
–7
V
Collector current
I
C
–4
A
Collector peak current
I
C(peak)
–8
A
Collector power dissipation
P
C
2W
P
C*
1
25
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
C to E diode forward current
I
D*
1
4A
Note:
1. Value at T
C = 25°C.
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
–60
V
I
C = –0.1 mA, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
–60
V
I
C = –25 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
–7
V
I
E = –50 mA, IC = 0
Collector cutoff current
I
CBO
–10
AV
CB = –50 V, IE = 0
I
CEO
–10
V
CE = –50 V, RBE = ∞
DC current transfer ratio
h
FE
1000
20000
V
CE = –3 V, IC = –2 A*
1
Collector to emitter saturation
V
CE(sat)1
–1.5
V
I
C = –2 A, IB = –4 mA*
1
voltage
V
CE(sat)2
–3.0
I
C = –4 A, IB = –40 mA*
1
Base to emitter saturation
V
BE(sat)1
–2.0
V
I
C = –2 A, IB = –4 mA*
1
voltage
V
BE(sat)2
–3.5
I
C = –4 A, IB = –40 mA*
1
C to E diode forward voltage
V
D
3.0
V
I
D = 4 A*
1
Note:
1. Pulse test.
See switching characteristic curve of 2SB1101.
相關(guān)PDF資料
PDF描述
2SB1390 8 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
2SB1394 3 A, 30 V, PNP, Si, POWER TRANSISTOR
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