參數(shù)資料
型號: 2SB1393
廠商: PANASONIC CORP
元件分類: 功率晶體管
英文描述: Silicon PNP epitaxial planar type(For power amplification)
中文描述: 3 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220F(A)
封裝: TO-220, FULL PACK-3
文件頁數(shù): 2/2頁
文件大?。?/td> 46K
代理商: 2SB1393
2
Power Transistors
2SB1393, 2SB1393A
P
C
— Ta
I
C
— V
BE
V
CE(sat)
— I
C
h
FE
— I
C
f
T
— I
C
C
ob
— V
CB
Area of safe operation (ASO)
R
th(t)
— t
0
160
40
120
80
140
20
100
60
0
40
30
10
20
(1) T
=Ta
(2) With a 100
×
100
×
2mm
Al heat sink
(3) Without heat sink
(P
C
=2.0W)
(1)
(2)
(3)
Ambient temperature Ta (C)
C
C
0
Base to emitter voltage V
BE
(V)
–2.0
–1.6
– 0.4
–1.2
– 0.8
0
–6
–5
–4
–3
–2
–1
V
CE
=–4V
–25C
25C
T
C
=100C
C
C
– 0.01
– 0.1
–1
–10
– 0.03
Collector current I
C
(A)
– 0.3
–3
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
–30
–100
I
C
/I
B
=10
25C
T
C
=100C
–25C
C
C
– 0.01
– 0.1
–1
–10
– 0.03
Collector current I
C
(A)
– 0.3
–3
10
10000
1000
100
30
300
3000
V
CE
=–4V
T
C
=125C
25C
–25C
F
F
– 0.01
– 0.1
–1
–10
– 0.03
Collector current I
C
(A)
– 0.3
–3
1000
100
10
3
30
300
V
=–5V
f=1MHz
T
C
=25C
T
T
–1
Collector to base voltage V
CB
(V)
–3
–10
–30
–100
10
10000
1000
100
30
300
3000
I
=0
f=1MHz
T
C
=25C
C
o
–1
–10
–100
–1000
–3
–30
–300
– 0.001
– 0.003
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
Non
repetitive
pulse
T
C
=25C
t=1ms
I
CP
I
C
10ms
2
2
DC
Collector to emitter voltage V
CE
(V)
C
C
10
–4
10
10
–3
10
–1
10
–2
1
10
3
10
2
10
4
0.1
1
10
100
10000
1000
Note: R
was measured at Ta=25C and under natural convection.
(1) P
T
=10V
×
0.2A (2W) and without heat sink
(2) P
T
=10V
×
1.0A (10W) and with a 100
×
100
×
2mm Al heat sink
(1)
(2)
Time t (s)
T
t
(
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