參數(shù)資料
型號(hào): 2SB1405
廠商: SANYO SEMICONDUCTOR CO LTD
元件分類: 小信號(hào)晶體管
英文描述: 700 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: NMP, 3 PIN
文件頁(yè)數(shù): 1/3頁(yè)
文件大?。?/td> 30K
代理商: 2SB1405
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP Epitaxial Planar Silicon Transistor
General Driver Applications
Ordering number:ENN3236
2SB1405
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
41504TN (PC)/O1598HA (KT)/O269MO, TS No.3236–1/3
Specifications
Absolute Maximum Ratings at Ta = 25C
Package Dimensions
unit:mm
2064A
[2SB1405]
Features
Darlington connection.
High DC current gain.
Large current capacity, wide ASO.
C
Electrical Characteristics at Ta = 25C
1 : Emitter
2 : Collector
3 : Base
SANYO : NMP
r
e
t
e
m
a
r
a
Pl
o
b
m
y
Ss
n
o
i
t
i
d
n
o
Cs
g
n
i
t
a
Rt
i
n
U
e
g
a
t
l
o
V
e
s
a
B
-
o
t
-
r
o
t
c
e
ll
o
CV
O
B
C
0
8
V
e
g
a
t
l
o
V
r
e
t
i
m
E
-
o
t
-
r
o
t
c
e
ll
o
CV
O
E
C
0
5
V
e
g
a
t
l
o
V
e
s
a
B
-
o
t
-
r
e
t
i
m
EV
O
B
E
0
1
V
t
n
e
r
u
C
r
o
t
c
e
ll
o
CIC
7
.
0
A
)
e
s
l
u
P
(
t
n
e
r
u
C
r
o
t
c
e
ll
o
CI P
C
2
A
n
o
i
t
a
p
i
s
i
D
r
o
t
c
e
ll
o
CPC
1W
e
r
u
t
a
r
e
p
m
e
T
n
o
i
t
c
n
u
Jj
T
0
5
1
e
r
u
t
a
r
e
p
m
e
T
e
g
a
r
o
t
Sg
t
s
T
0
5
1
+
o
t
5
r
e
t
e
m
a
r
a
Pl
o
b
m
y
Ss
n
o
i
t
i
d
n
o
C
s
g
n
i
t
a
R
t
i
n
U
n
i
mp
y
tx
a
m
t
n
e
r
u
C
f
o
t
u
C
r
o
t
c
e
ll
o
CI
O
B
C
V B
C
I
,
V
0
4
=
E 0
=0
0
1
A
n
t
n
e
r
u
C
f
o
t
u
C
r
e
t
i
m
EI
O
B
E
V B
E
I
,
V
8
=
C 0
=0
0
1
A
n
i
a
G
t
n
e
r
u
C
D
h E
F 1V E
C
I
,
V
2
=
C
A
m
0
5
=
0
5
h E
F 2V E
C
I
,
V
2
=
C
A
m
0
5
=
0
3
t
c
u
d
o
r
P
h
t
d
i
w
d
n
a
B
-
n
i
a
GfT
V E
C
I
,
V
5
=
C
A
m
0
5
=
0
7
1z
H
M
e
c
n
a
t
i
c
a
p
a
C
t
u
p
t
u
OC b
o
V B
C
z
H
M
1
=
f
,
V
0
1
=
8
1F
p
e
g
a
t
l
o
V
n
o
i
t
a
r
u
t
a
S
r
e
t
i
m
E
-
o
t
-
r
o
t
c
e
ll
o
CV
)
t
a
s
(
E
C
IC
I
,
A
m
0
1
=
B
A
m
1
.
0
=
8
.
0
2
.
1
V
e
g
a
t
l
o
V
n
o
i
t
a
r
u
t
a
S
r
e
t
i
m
E
-
o
t
-
e
s
a
BV
)
t
a
s
(
E
B
IC
I
,
A
m
0
1
=
B
A
m
1
.
0
=
4
.
1
0
.
2
V
6.9
0.6
0.5
4.5
1.0
0.9
2.5
1.45
1.0
0.45
4.0
1.0
2.54
123
Continued on next page.
相關(guān)PDF資料
PDF描述
2SB1405 700 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB1406 1500 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB1407(L)D 2.5 A, 35 V, PNP, Si, POWER TRANSISTOR
2SB1409(L)B 1.5 A, 160 V, PNP, Si, POWER TRANSISTOR
2SB1409(S)C 1.5 A, 160 V, PNP, Si, POWER TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SB1412TL/Q 制造商:ROHM Semiconductor 功能描述:5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB1412TLP 功能描述:兩極晶體管 - BJT PNP 20V 5A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SB1412TLQ 功能描述:兩極晶體管 - BJT PNP 20V 5A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SB1412TLR 功能描述:兩極晶體管 - BJT PNP 20V 5A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SB1412TRR 功能描述:兩極晶體管 - BJT PNP LOW VCE RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2