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參數(shù)資料
| 型號： | 2SB1416 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon PNP epitaxial planar type |
| 中文描述： | 3 A, 60 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | ROHS COMPLIANT, MT-3-A1, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 82K |
| 代理商： | 2SB1416 |
1
Power Transistors
2SB1416
Silicon PNP epitaxial planar type
Publication date: March 2003
SJD00071BED
For low-frequency power amplification
Complementary to 2SD2136
■
Features
High forward current transfer ratio h
FE
which has satisfactory
linearity
Low collector-emitter saturation voltage V
CE(sat)
Allowing automatic insertion with radial taping
■
Absolute Maximum Ratings
T
a
=
25
°
C
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Unit: mm
1: Emitter
2: Collector
3: Base
MT-3-A1 Package
7.5
±
0.2
0.65
±
0.1
2
±
0
0.7
±
0.1
1.15
±
0.2
2.5
±
0.2
2.5
±
0.2
0.85
±
0.1
1.0
±
0.1
0.7
±
0.1
1.15
±
0.2
0.5
±
0.1
1
0.8 C
2
3
0.4
±
0.1
4.5
±
0.2
0.8 C
0.8 C
3
±
0
1
±
1
1
±
0
2
±
0
9
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
60
60
5
3
5
V
Collector-emitter voltage (Base open)
V
CEO
V
Emitter-base voltage (Collector open)
V
EBO
I
C
V
Collector current
A
Peak collector current
I
CP
A
Collector power dissipation
P
C
T
j
T
stg
1.5
W
Junction temperature
150
°
C
°
C
Storage temperature
55 to
+
150
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Rank
P
Q
R
h
FE1
40 to 90
70 to 150
120 to 250
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
V
CEO
I
C
=
30 mA, I
B
=
0
V
CE
=
4 V, I
C
=
3 A
V
CE
=
60 V, V
BE
=
0
V
CE
=
30 V, I
B
=
0
V
EB
=
5 V, I
C
=
0
V
CE
=
4 V, I
C
=
1 A
V
CE
=
4 V, I
C
=
3 A
I
C
=
3 A, I
B
=
0.375A
V
CB
=
5 V, I
E
=
0.1 A, f
=
200 MHz
60
V
Base-emitter voltage
V
BE
1.8
200
300
1
V
Collector-emitter cutoff current (E-B short)
I
CES
I
CEO
μ
A
μ
A
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
I
EBO
h
FE1
*
h
FE2
mA
Forward current transfer ratio
40
250
10
Collector-emitter saturation voltage
V
CE(sat)
1.2
V
Transition frequency
f
T
t
on
270
MHz
Turn-on time
I
C
=
1 A, I
B1
=
0.1 A, I
B2
=
0.1 A
0.5
μ
s
μ
s
μ
s
Storage time
t
stg
1.2
Fall time
t
f
0.3
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PDF描述 |
|---|---|
| 2SD2136 | Silicon PNP epitaxial planar type |
| 2SB1417 | Silicon PNP epitaxial planar type(For power amplification) |
| 2SB1417A | Silicon PNP epitaxial planar type(For power amplification) |
| 2SB1418 | Silicon PNP epitaxial planar type Darlington(For power amplification) |
| 2SB1418A | Silicon PNP epitaxial planar type Darlington(For power amplification) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB14160RA | 功能描述:TRANS PNP 60VCEO 3A MT-3 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SB14170JA | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB14170QA | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB1417APA | 功能描述:TRANS PNP LF 80VCEO 3A MT-4 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SB1417PQTA | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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