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參數(shù)資料
| 型號： | 2SB1417 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon PNP epitaxial planar type(For power amplification) |
| 中文描述： | 3 A, 60 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | MT4, 3 PIN |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 55K |
| 代理商： | 2SB1417 |
2
Power Transistors
2SB1417, 2SB1417A
P
C
— Ta
I
C
— V
CE
V
CE(sat)
— I
C
I
C
— V
BE
h
FE
— I
C
f
T
— I
C
C
ob
— V
CB
t
on
, t
stg
, t
f
— I
C
Area of safe operation (ASO)
0
160
40
120
80
140
20
100
60
0
20
15
5
10
(1) T
=Ta
(2) Without heat sink
(P
C
=2.0W)
(1)
(2)
Ambient temperature Ta (C)
C
C
0
–12
–10
–8
–2
–6
–4
0
–6
–5
–4
–3
–2
–1
T
C
=25C
–10mA
–20mA
–30mA
–40mA
–50mA
–60mA
–70mA
–80mA
–90mA
I
B
=–100mA
Collector to emitter voltage V
CE
(V)
C
C
– 0.1
–1
–10
–100
– 0.3
Collector current I
C
(A)
–3
–30
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
–30
–100
I
C
/I
B
=8
25C
100C
T
C
=–25C
C
C
0
Base to emitter voltage V
BE
(V)
–2.0
–1.6
– 0.4
–1.2
– 0.8
0
–6
–5
–4
–3
–2
–1
V
CE
=–4V
T
C
=100C
–25C
25C
C
C
– 0.01
– 0.1
–1
–10
– 0.03
Collector current I
C
(A)
– 0.3
–3
10
30
100
300
1000
3000
10000
30000
100000
V
CE
=–4V
T
C
=100C
25C
–25C
F
F
– 0.01
– 0.1
–1
–10
– 0.03
Collector current I
C
(A)
– 0.3
–3
3
10
30
100
300
1000
3000
10000
V
=–5V
f=10MHz
T
C
=25C
T
T
–1
Collector to base voltage V
CB
(V)
–3
–10
–30
–100
1
1000
100
10
3
30
300
I
=0
f=1MHz
T
C
=25C
C
o
0
–4
–1
–3
–2
0.01
0.03
0.1
0.3
1
3
10
30
100
t
stg
t
on
t
f
Pulsed t
=1ms
Duty cycle=1%
I
C
/I
B
=5
(I
B1
=–I
)
V
CC
=–200V
T
C
=25C
Collector current I
C
(A)
S
o
,
s
,
f
μ
s
–1
–10
–100
–1000
–3
–30
–300
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
–30
–100
t=1ms
I
CP
I
C
10ms
2
2
Non repetitive pulse
T
C
=25C
DC
Collector to emitter voltage V
CE
(V)
C
C
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| 2SB1429 | TRANSISTOR SILICON PNP EPITAXIAL TYPE POWER AMPLIFIER APPLICATION |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB14170JA | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB14170QA | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB1417APA | 功能描述:TRANS PNP LF 80VCEO 3A MT-4 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SB1417PQTA | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB1417PTA | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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