參數(shù)資料
型號(hào): 2SB1539
廠商: PANASONIC CORP
元件分類: 小信號(hào)晶體管
英文描述: Silicon PNP epitaxial planer type(For low-frequency amplification)
中文描述: 1000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: SC-62, 3 PIN
文件頁(yè)數(shù): 1/2頁(yè)
文件大小: 36K
代理商: 2SB1539
1
Transistor
2SB1539
Silicon PNP epitaxial planer type
For low-frequency amplification
Complementary to 2SD2359
I
Features
G
Low collector to emitter saturation voltage V
CE(sat)
.
G
Large collector power dissipation P
C
.
G
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector
3:Emitter
EIAJ:SC–62
Mini Power Type Package
4.5
±
0.1
1.6
±
0.2
2
±
0
2
±
0
0
1
+
4
+
3.0
±
0.15
1.5
±
0.1
0.4
±
0.08
0.5
±
0.08
1.5
±
0.1
0.4
±
0.04
45
°
marking
3
2
1
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C*
T
j
T
stg
Ratings
–20
–20
–5
–1.2
–1
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= –14V, I
E
= 0
I
C
= –10
μ
A, I
E
= 0
I
C
= –1mA, I
B
= 0
I
E
= –10
μ
A, I
C
= 0
V
CE
= –2V, I
C
= –100mA
**
I
C
= –500mA, I
B
= –10mA
**
V
CB
= –10V, I
E
= 50mA, f = 200MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
min
–20
–20
–5
200
typ
120
30
max
–1
800
– 0.2
Unit
μ
A
V
V
V
V
MHz
pF
*
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
**
Pulse measurement
Marking symbol :
1N
相關(guān)PDF資料
PDF描述
2SB1548 Silicon PNP epitaxial planar type(For power amplification)
2SB1548A Silicon PNP epitaxial planar type(For power amplification)
2SB1553 Silicon PNP epitaxial planar type(For power amplification)
2SB1554 Silicon PNP epitaxial planar type(For power amplification)
2SB1555 TRANSISTOR (POWER AMPLIFIER APPLICATIONS)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SB1548 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR SUBBING WITH 2SB1548A-P
2SB1548A 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SB1548AP 功能描述:TRANS PNP LF 80VCEO 3A TO-220D RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)(最大):1A 電壓 - 集電極發(fā)射極擊穿(最大):30V Ib、Ic條件下的Vce飽和度(最大):200mV @ 100mA,1A 電流 - 集電極截止(最大):100nA 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):300 @ 500mA,5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3(TO-236) 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR
2SB1548A-P 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SB1548PQAU 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR