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參數(shù)資料
| 型號： | 2SB1604 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon PNP epitaxial planar type(For low-voltage switching) |
| 中文描述： | 10 A, 20 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | TO-220E, FULL PACK-3 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 56K |
| 代理商： | 2SB1604 |
2
Power Transistors
2SB1604, 2SB1604A
P
C
— Ta
I
C
— V
CE
V
CE(sat)
— I
C
V
BE(sat)
— I
C
h
FE
— I
C
f
T
— I
C
C
ob
— V
CB
t
on
, t
stg
, t
f
— I
C
Area of safe operation (ASO)
0
160
40
120
80
140
20
100
60
0
50
40
30
20
10
(1) T
=Ta
(2) With a 100
×
100
×
2mm
Al heat sink
(3) With a 50
×
50
×
2mm
Al heat sink
(4) Without heat sink
(P
C
=2W)
(1)
(4)
(3)
(2)
Ambient temperature Ta (C)
C
C
0
–12
–10
–8
–2
–6
–4
0
–12
–10
–8
–6
–4
–2
T
C
=25C
–80mA
–60mA
–50mA
–40mA
–35mA
–30mA
–20mA
–15mA
–25mA
–10mA
–5mA
I
B
=–100mA
Collector to emitter voltage V
CE
(V)
C
C
– 0.1
–1
–10
– 0.3
Collector current I
C
(A)
–3
– 0.01
–10
–1
– 0.1
– 0.03
– 0.3
–3
I
C
/I
B
=30
T
C
=–25C
25C
100C
B
B
1
–1
–10
–100
– 0.3
Collector current I
C
(A)
–3
–30
3
10
30
100
300
1000
3000
10000
V
CE
=–2V
T
C
=100C
25C
–25C
F
F
1
Collector to base voltage V
CB
(V)
–1
–10
–100
– 0.3
–3
–30
3
10
30
100
300
1000
3000
10000
I
=0
f=1MHz
T
C
=25C
C
o
0
–8
–2
–6
–4
–7
–1
Collector current I
C
(A)
–5
–3
0.01
10
1
0.1
0.03
0.3
3
t
stg
t
on
t
f
Pulsed t
=1ms
Duty cycle=1%
I
C
/I
B
=30
(–I
B1
=I
)
V
CC
=–20V
T
C
=25C
S
o
,
s
,
f
μ
s
– 0.1
–1
–10
– 0.3
Collector current I
C
(A)
–3
– 0.01
–10
–1
– 0.1
– 0.03
– 0.3
–3
I
C
/I
B
=30
T
C
=100C
–25C
25C
C
C
– 0.01
– 0.1
–1
–10
– 0.03
Collector current I
C
(A)
– 0.3
–3
3
10
30
100
300
1000
3000
10000
V
=–10V
f=10MHz
T
C
=25C
T
T
– 0.1
Collector to emitter voltage V
CE
(V)
–1
–10
–100
– 0.3
–3
–30
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
–30
–100
I
CP
I
C
10ms
t=1ms
2
2
Non repetitive pulse
T
C
=25C
DC
C
C
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