參數(shù)資料
型號(hào): 2SB647-B
元件分類: 小信號(hào)晶體管
英文描述: SMALL SIGNAL TRANSISTOR
文件頁數(shù): 2/6頁
文件大?。?/td> 31K
代理商: 2SB647-B
2SB647, 2SB647A
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
2SB647
2SB647A
Unit
Collector to base voltage
V
CBO
–120
V
Collector to emitter voltage
V
CEO
–80
–100
V
Emitter to base voltage
V
EBO
–5
V
Collector current
I
C
–1
A
Collector peak current
i
C(peak)
–2
A
Collector power dissipation
P
C
0.9
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
2SB647
2SB647A
Item
Symbol Min
Typ
Max
Min
Typ
Max Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
–120 —
–120 —
V
I
C = –10 A, IE = 0
Collector to emitter
breakdown voltage
V
(BR)CEO
–80
–100 —
V
I
C = –1 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
–5
–5
V
I
E = –10 A, IC = 0
Collector cutoff current
I
CBO
–10
–10
AV
CB = –100 V, IE = 0
DC current transfer ratio
h
FE1*
1
60
320
60
200
V
CE = –5 V,
I
C = –150 mA*
2
h
FE2
30
30
V
CE = –5 V,
I
C = –500 mA*
2
Collector to emitter
saturation voltage
V
CE(sat)
–1
–1
V
I
C = –500 mA,
I
B = –50 mA*
2
Base to emitter voltage
V
BE
–1.5
–1.5 V
V
CE = –5 V,
I
C = –150 mA*
2
Gain bandwidth product
f
T
140
140
MHz V
CE = –5 V, IC = –150 mA
Collector output capacitance Cob
20
20
pF
V
CB = –10 V, IE = 0
f = 1 MHz
Notes: 1. The 2SB647 and 2SB647A are grouped by h
FE1 as follows.
2. Pulse test
BC
D
2SB647
60 to 120
100 to 200
160 to 320
2SB647A
60 to 120
100 to 200
相關(guān)PDF資料
PDF描述
2SB647A-B SMALL SIGNAL TRANSISTOR
2SB647A-C SMALL SIGNAL TRANSISTOR
2SB647A SMALL SIGNAL TRANSISTOR
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2SB688O 10 A, 120 V, PNP, Si, POWER TRANSISTOR
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