參數(shù)資料
型號(hào): 2SB736BW1
元件分類: 小信號(hào)晶體管
英文描述: 300 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: MINIMOLD PACKAGE-3
文件頁(yè)數(shù): 4/6頁(yè)
文件大?。?/td> 306K
代理商: 2SB736BW1
Data Sheet D18429EJ2V0DS
4
2SK3325B
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
-
Dr
ain
Cur
rent
-
A
0
2
4
6
8
10
12
14
16
18
20
0
5
10
15
20
25
VGS = 20 V
Pulsed
10 V
VDS - Drain to Source Voltage - V
I
D
-Drain
Cu
rr
ent
-
A
0.001
0.01
0.1
1
10
100
02
4
6
8
10
12
14
VDS = 10 V
Pulsed
TA=
55°C
25°C
25
°C
75
°C
125
°C
150
°C
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
GS
(o
ff)
-
Gate
Cut
-off
V
ol
tage
-
V
0
1
2
3
4
5
-50
0
50
100
150
VDS = 10 V
ID = 1 mA
Tch - Channel Temperature -
°C
|
y
fs
|-
Forward
T
ransfer
Ad
mittance
-
S
0.01
0.1
1
10
0.01
0.1
1
10
100
VDS = 10 V
Pulsed
TA =
55°C
25°C
25
°C
75
°C
125
°C
150
°C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
R
DS
(on)
-Drain
to
Sou
rc
eOn-s
tate
Re
sis
tance
-
Ω
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
5
10
15
20
Pulsed
ID = 10 A
5.0 A
2.0 A
VGS – Gate to Source Voltage - V
R
DS
(on)
-Drain
to
Sou
rc
eOn-s
tate
Re
sis
tance
-
Ω
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
0.1
1
10
100
20 V
VGS = 10 V
Pulsed
ID - Drain Current - A
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SB736BW1-T1B 制造商:NEC 制造商全稱:NEC 功能描述:AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR(MINI MOLD)
2SB736BW2 制造商:NEC 制造商全稱:NEC 功能描述:AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR(MINI MOLD)
2SB736BW2-T1B 制造商:NEC 制造商全稱:NEC 功能描述:AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR(MINI MOLD)
2SB736BW3 制造商:NEC 制造商全稱:NEC 功能描述:AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR(MINI MOLD)
2SB736BW3-T1B 制造商:NEC 制造商全稱:NEC 功能描述:AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR(MINI MOLD)