參數(shù)資料
型號: 2SB774
廠商: PANASONIC CORP
元件分類: 小信號晶體管
英文描述: Silicon PNP epitaxial planer type(For low-frequency amplification)
中文描述: 100 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: ROHS COMPLIANT, SC-43A, TO-92-B1, 3 PIN
文件頁數(shù): 1/2頁
文件大小: 35K
代理商: 2SB774
1
Transistor
2SB774
Silicon PNP epitaxial planer type
For low-frequency amplification
I
Features
G
High emitter to base voltage V
EBO
.
G
Protective diodes and resistances between emitter and base can
be omitted.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
5.0
±
0.2
4.0
±
0.2
5
±
0
1
±
0
0.45
+0.2
0.45
+0.2
1.27
1.27
2
±
0
2.54
±
0.15
2
1
3
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–30
–25
–15
–200
–100
400
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE1*
h
FE2
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= –10V, I
E
= 0
V
CE
= –20V, I
B
= 0
I
C
= –10
μ
A, I
E
= 0
I
C
= –2mA, I
B
= 0
I
E
= –10
μ
A, I
C
= 0
V
CE
= –10V, I
C
= –2mA
V
CE
= –2V, I
C
= –100mA
I
C
= –100mA, I
B
= –10mA
V
CB
= –10V, I
E
= 2mA, f = 200MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
min
–30
–25
–15
210
90
typ
150
4
max
–1
–100
460
–0.5
Unit
μ
A
μ
A
V
V
V
V
MHz
pF
*
h
FE1
Rank classification
Rank
R
S
h
FE1
210 ~ 340
290 ~ 460
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