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參數(shù)資料
| 型號： | 2SB0790 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | For Low-Frequency Output Application |
| 中文描述： | 500 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | M-A1, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 70K |
| 代理商： | 2SB0790 |
Transistors
2SB0790
(2SB790)
Silicon PNP epitaxial planar type
1
Publication date: January 2003
SJC00057BED
For low-frequency output amplification
■
Features
Low collector-emitter saturation voltage V
CE(sat)
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
25
20
7
0.5
1
V
Collector-emitter voltage (Base open)
V
CEO
V
Emitter-base voltage (Collector open)
V
EBO
I
C
V
Collector current
A
Peak collector current
I
CP
A
Collector power dissipation
P
C
T
j
600
mW
Junction temperature
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Note) The part number in the parenthesis shows conventional part number.
Rank
Q
R
h
FE1
90 to 155
130 to 220
Unit: mm
1: Base
2: Collector
3: Emitter
M-A1 Package
6.9
±
0.1
2.5
±
0.1
(1.0)
(
(1.5)
(0.85)
0.55
±
0.1
0.45
±
0.05
(2.5)
(2.5)
2
1
3
R 0.7
R 0.9
(
3
±
0
4
±
0
4
±
0
2
±
0
1
±
0
2
±
0
1
±
0
(1.5)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
V
CEO
I
C
=
10
μ
A, I
E
=
0
I
C
=
1 mA, I
B
=
0
I
E
=
10
μ
A, I
C
=
0
V
CB
=
25 V, I
E
=
0
V
CE
=
20 V, I
B
=
0
V
CE
=
2 V, I
C
=
0.5 A
V
CE
=
2 V, I
C
=
1 A
I
C
=
500 mA, I
B
=
50 mA
I
C
=
500 mA, I
B
=
50 mA
V
CB
=
10 V, I
E
=
50 mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
25
20
7
V
Collector-emitter voltage (Base open)
V
Emitter-base voltage (Collector open)
V
EBO
V
Collector-base cutoff current (Emitter open)
I
CBO
I
CEO
h
FE1
*2
0.1
1
μ
A
μ
A
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
*1
90
220
h
FE2
V
CE(sat)
25
Collector-emitter saturation voltage
*1
Base-emitter saturation voltage
*1
0.4
1.2
V
V
BE(sat)
V
Transition frequency
f
T
C
ob
150
MHz
Collector output capacitance
(Common base, input open circuited)
15
25
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*1: Pulse measurement
*2: Rank classification
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB0790(2SB790) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2SB0790 (2SB790) - PNP Transistor |
| 2SB0790Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 500MA I(C) | SC-71 |
| 2SB0790R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 500MA I(C) | SC-71 |
| 2SB0792 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:For High Breakdown Voltage Low-noise Amplification |
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