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參數(shù)資料
| 型號： | 2SB819 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Silicon PNP epitaxial planer type(For low-frequency output amplification) |
| 中文描述： | 1500 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | M-A1, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 47K |
| 代理商： | 2SB819 |
1
Transistor
2SB819
Silicon PNP epitaxial planer type
For low-frequency output amplification
Complementary to 2SD1051
I
Features
G
High collector to emitter voltage V
CEO
.
G
Large collector power dissipation P
C
.
G
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
6.9
±
0.1
0.55
±
0.1
0.45
±
0.05
1
±
0
1
2.5
±
0.1
1.0
1.5
1.5 R0.9
R0.9
R07
0
0.85
3
±
0
2
±
0
2
±
0
1
±
0
4
±
0
4
±
0
2.5
2.5
1
2
3
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C*
T
j
T
stg
Ratings
–50
–40
–5
–3
–1.5
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
CEO
I
EBO
V
CBO
V
CEO
h
FE*1
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= –20V, I
E
= 0
V
CE
= –10V, I
B
= 0
V
EB
= –5V, I
C
= 0
I
C
= –1mA, I
E
= 0
I
C
= –2mA, I
B
= 0
V
CE
= –5V, I
C
= –1A
*2
I
C
= –1.5A, I
B
= –0.15A
*2
I
C
= –2A, I
B
= –0.2A
*2
V
CB
= –5V, I
E
= 0.5A, f = 200MHz
V
CB
= –20V, I
E
= 0, f = 1MHz
min
–50
–40
80
typ
150
45
max
–1
–100
–10
220
–1
–1.5
Unit
μ
A
μ
A
μ
A
V
V
V
V
MHz
pF
*1
h
FE
Rank classification
Rank
Q
R
h
FE
80 ~ 160
120 ~ 220
*2
Pulse measurement
*
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB819Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 1.5A I(C) | SC-71 |
| 2SB819R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 1.5A I(C) | SC-71 |
| 2SB821 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 300MA I(C) | SIP |
| 2SB822 | 制造商:ROHM 制造商全稱:Rohm 功能描述:Medium Power Transistor (32V, 2A) |
| 2SB822P | 制造商:ROHM 制造商全稱:Rohm 功能描述:MEDIUM POWER TRANSISTOR(-32V, -2A) |
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