參數(shù)資料
型號(hào): 2SB819
廠商: PANASONIC CORP
元件分類: 小信號(hào)晶體管
英文描述: Silicon PNP epitaxial planer type(For low-frequency output amplification)
中文描述: 1500 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: M-A1, 3 PIN
文件頁(yè)數(shù): 2/3頁(yè)
文件大?。?/td> 47K
代理商: 2SB819
2
Transistor
2SB819
0
160
40
120
80
140
20
100
60
0
1.2
1.0
0.8
0.6
0.4
0.2
Printed circut board: Copper
foil area of 1cm
2
or more, and
the board thickness of 1.7mm
for the collector portion.
Ambient temperature Ta (C)
C
C
0
–10
–8
–2
–6
–4
0
–4.0
–3.0
–1.0
–2.5
–3.5
–2.0
– 0.5
–1.5
Ta=25C
I
B
=–40mA
–30mA
–25mA
–20mA
–15mA
–10mA
–35mA
–5mA
Collector to emitter voltage V
CE
(V)
C
C
– 0.01
– 0.1
–1
–10
– 0.03
Collector current I
C
(A)
– 0.3
–3
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
–30
–100
I
C
/I
B
=10
Ta=75C
25C
–25C
C
C
– 0.01
– 0.1
–1
–10
– 0.03
Collector current I
C
(A)
– 0.3
–3
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
–30
–100
I
C
/I
B
=10
Ta=–25C
75C
25C
B
B
– 0.01
– 0.1
–1
–10
– 0.03
Collector current I
C
(A)
– 0.3
–3
600
500
400
300
200
100
V
CE
=–5V
Ta=75C
25C
–25C
F
F
10
100
1000
10000
30
Emitter current I
E
(mA)
300
3000
0
240
200
160
120
80
40
V
=–5V
Ta=25C
T
T
–1
Collector to base voltage V
CB
(V)
–3
–10
–30
–100
0
150
120
60
90
30
I
=0
f=1MHz
Ta=25C
C
o
0
Base to emitter resistance R
BE
(k
)
0.01
0.1
1
10
–60
–50
–40
–30
–20
–10
Ta=25C
C
C
0
120
100
80
20
60
40
1
1000
100
10
3
30
300
V
CE
=–12V
Ambient temperature Ta (C)
I
C
I
C
P
C
— Ta
I
C
— V
CE
V
CE(sat)
— I
C
V
BE(sat)
— I
C
h
FE
— I
C
f
T
— I
E
C
ob
— V
CB
V
CER
— R
BE
I
CEO
— Ta
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