參數(shù)資料
型號: 2SB939A
廠商: PANASONIC CORP
元件分類: 功率晶體管
英文描述: Silicon PNP epitaxial planar type Darlington
中文描述: 8 A, 80 V, PNP, Si, POWER TRANSISTOR
封裝: ROHS COMPLIANT, N-G1, 3 PIN
文件頁數(shù): 1/3頁
文件大?。?/td> 73K
代理商: 2SB939A
1
Power Transistors
2SB939, 2SB939A
Silicon PNP epitaxial planar type Darlington
For midium-speed power switching
Complementary to 2SD1262 and 2SD1262A
I
Features
G
High foward current transfer ratio h
FE
G
High-speed switching
G
N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
I
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–60
–80
–60
–80
–7
–12
–8
45
1.3
150
–55 to +150
Unit
V
V
V
A
A
W
C
C
2SB939
2SB939A
2SB939
2SB939A
T
C
=25
°
C
Ta=25
°
C
I
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
EBO
V
CEO
h
FE1*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= –60V, I
E
= 0
V
CB
= –80V, I
E
= 0
V
EB
= –7V, I
C
= 0
I
C
= –30mA, I
B
= 0
V
CE
= –3V, I
C
= –4A
V
CE
= –3V, I
C
= –8A
I
C
= –4A, I
B
= –8mA
I
C
= –4A, I
B
= –8mA
V
CE
= –10V, I
C
= – 0.5A, f = 1MHz
I
C
= –4A, I
B1
= –8mA, I
B2
= 8mA,
V
CC
= –50V
min
–60
–80
2000
500
typ
15
0.5
2
1
max
–100
–100
–2
10000
–1.5
–2
Unit
μ
A
mA
V
V
V
MHz
μ
s
μ
s
μ
s
2SB939
2SB939A
2SB939
2SB939A
*
h
FE1
Rank classification
Rank
Q
P
h
FE1
2000 to 5000
4000 to 10000
Internal Connection
B
C
E
Unit: mm
1:Base
2:Collector
3:Emitter
N Type Package
8.5
±
0.2
6.0
±
0.5
1
±
0
1
2
1
±
0
1.5max.
0.8
±
0.1
5.08
±
0.5
2.54
±
0.3
1.1max.
0.5max.
1.0
±
0.1
3.4
±
0.3
2
1
3
Unit: mm
3.4
±
0.3
8.5
±
0.2
4
±
0
2
1
±
0
1
±
0
4
±
0
6.0
±
0.3
2.54
±
0.3
5.08
±
0.5
1.0
±
0.1
0.8
±
0.1
1
+
3
+
0 to 0.4
1.1 max.
R0.5
R0.5
1
2
3
1:Base
2:Collector
3:Emitter
N Type Package (DS)
相關PDF資料
PDF描述
2SB940 Silicon PNP epitaxial planar type(For power amplification)
2SD1264A Silicon PNP epitaxial planar type(For power amplification)
2SB940A For Power Amplification
2SB941 Silicon PNP epitaxial planar type(For low-frequency power amplification)
2SB0941 Silicon PNP epitaxial planar type(For low-frequency power amplification)
相關代理商/技術參數(shù)
參數(shù)描述
2SB939AP 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 8A I(C) | TO-262VAR
2SB939AQ 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 8A I(C) | TO-262VAR
2SB939AR 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 8A I(C) | TO-221VAR
2SB939P 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | PNP | 60V V(BR)CEO | 8A I(C) | TO-262VAR
2SB939Q 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | PNP | 60V V(BR)CEO | 8A I(C) | TO-262VAR