- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371493 > 2SD1264A (PANASONIC CORP) Silicon PNP epitaxial planar type(For power amplification) PDF資料下載
參數(shù)資料
| 型號： | 2SD1264A |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon PNP epitaxial planar type(For power amplification) |
| 中文描述： | 2 A, 180 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | SC-67, TO-220F-A1, FULL PACK-3 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 46K |
| 代理商： | 2SD1264A |
1
Power Transistors
2SB940, 2B940A
Silicon PNP epitaxial planar type
For power amplification
For TV vertical deflection output
Complementary to 2SD1264 and 2SD1264A
I
Features
G
High collector to emitter voltage V
CEO
G
Large collector power dissipation P
C
G
Full-pack package which can be installed to the heat sink with
one screw
I
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–200
–150
–180
–6
–3
–2
30
2
150
–55 to +150
Unit
V
V
V
A
A
W
C
C
2SB940
2SB940A
2SB940
2SB940A
T
C
=25
°
C
Ta=25
°
C
*
h
FE1
Rank classification
Rank
Q
P
h
FE1
60 to 140
100 to 240
I
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Symbol
I
CBO
I
EBO
V
CBO
V
CEO
V
EBO
h
FE1*
h
FE2
V
BE
V
CE(sat)
f
T
Conditions
V
CB
= –200V, I
E
= 0
V
EB
= –4V, I
C
= 0
I
C
= –50
μ
A, I
E
= 0
I
C
= –5mA, I
B
= 0
I
E
= –500
μ
A, I
C
= 0
V
CE
= –10V, I
C
= –150mA
V
CE
= –10V, I
C
= –400mA
V
CE
= –10V, I
C
= –400mA
I
C
= –500mA, I
B
= –50mA
V
CE
= –10V, I
C
= – 0.5A, f = 10MHz
min
–200
–150
–180
–6
60
50
typ
30
max
–50
–50
240
–1
–1
Unit
μ
A
μ
A
V
V
V
V
V
MHz
2SB940
2SB940A
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
10.0
±
0.2
5.5
±
0.2
7
±
0
1
±
0
0
±
0
1
±
0
S
4
0.5
+0.2
–0.1
1.4
±
0.1
1.3
±
0.2
0.8
±
0.1
2.54
±
0.25
5.08
±
0.5
2
1
3
2.7
±
0.2
4.2
±
0.2
4
±
0
φ
3.1
±
0.1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB940A | For Power Amplification |
| 2SB941 | Silicon PNP epitaxial planar type(For low-frequency power amplification) |
| 2SB0941 | Silicon PNP epitaxial planar type(For low-frequency power amplification) |
| 2SB941A | Silicon PNP epitaxial planar type(For low-frequency power amplification) |
| 2SD1266A | Silicon PNP epitaxial planar type(For low-frequency power amplification) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD1264AP | 功能描述:TRANS NPN LF 180VCEO 2A TO-220F RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SD1264A-P | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN triple diffusion planar type |
| 2SD1264APLS | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1264AQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 2A I(C) | SOT-186 |
| 2SD1264P | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。