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參數(shù)資料
| 型號(hào)： | 2SC1317 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Medium Power Amplifiers and Switches |
| 中文描述： | 中功率放大器和開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 67K |
| 代理商： | 2SC1317 |
Transistors
2SC1317, 2SC1318
Silicon NPN epitaxial planer type
1
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff current
I
CBO
V
CBO
V
CB
=
20 V, I
E
=
0
I
C
=
10
μ
A, I
E
=
0
0.1
μ
A
Collector to
base voltage
2SC1317
30
V
2SC1318
60
Collector to
emitter voltage
2SC1317
V
CEO
I
C
=
10 mA, I
B
=
0
25
V
2SC1318
50
Emitter to base voltage
V
EBO
h
FE1
*2
h
FE2
V
CE(sat)
I
E
=
10
μ
A, I
C
=
0
V
CE
=
10 V, I
C
=
150 mA
V
CE
=
10 V, I
C
=
500 mA
I
C
=
300 mA, I
B
=
30 mA
I
C
=
300 mA, I
B
=
30 mA
V
CB
=
10 V, I
E
=
50 mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0
, f
=
1 MHz
7
V
Forward current transfer ratio
*1
85
340
40
Collector to emitter saturation voltage
*1
0.35
0.6
V
Base to emitter saturation voltage
*1
V
BE(sat)
f
T
C
ob
1.1
1.5
V
Transition frequency
200
MHz
Collector output capacitance
6
15
pF
For low-frequency power amplification and driver amplification
Complementary to 2SA719 and 2SA720
I
Features
Low collector to emitter saturation voltage V
CE(sat)
Complementary pair with 2SA719 and 2SA720
I
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Collector to
base voltage
2SC1317
V
CBO
30
V
2SC1318
60
Collector to
emitter voltage
2SC1317
V
CEO
25
V
2SC1318
50
Emitter to base voltage
V
EBO
I
CP
I
C
7
V
Peak collector current
1
A
Collector current
500
mA
Collector power dissipation
P
C
T
j
T
stg
625
mW
Junction temperature
150
°
C
°
C
Storage temperature
55 to
+
150
I
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Note)*1: Pulse measurement
*2: Rank classification
Rank
Q
R
S
h
FE1
85 to 170
120 to 240
170 to 340
1: Emitter
2: Collector
3: Base
TO-92 Package
Unit: mm
5.0
±
0.2
0.7
±
0.1
(1.27)
1
3
2
2.54
±
0.15
(1.27)
2
±
0
0.45
+0.15
0.45
+0.15
0
±
0
5
±
0
1
±
0
4.0
±
0.2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC1318A | Silicon NPN epitaxial planer type(For low-frequency driver amplification) |
| 2SC1324 | NPN EPITAXIAL PLANAR TYPE(Broadband amplifiers from VHF to UHF band) |
| 2SC1328 | Si NPN Epitaxial Planar |
| 2SC1327 | Si NPN Epitaxial Planar |
| 2SC1335 | LOW FREQUENCY LOW NOISE AMPLIFIER |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC1317/2SC1318 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2SC1317. 2SC1318 - NPN Transistor |
| 2SC1317Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 500MA I(C) | TO-92 |
| 2SC1317R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 500MA I(C) | TO-92 |
| 2SC1317S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 500MA I(C) | TO-92 |
| 2SC1318 | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:NPN Plastic Encapsulated Transistor |
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