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參數(shù)資料
| 型號： | 2SC1318A |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Silicon NPN epitaxial planer type(For low-frequency driver amplification) |
| 中文描述： | 500 mA, 70 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | ROHS COMPLIANT, TO-92-B1, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 45K |
| 代理商： | 2SC1318A |
1
Transistor
2SC1318A
Silicon NPN epitaxial planer type
For low-frequency driver amplification
Complementary to 2SA720A
I
Features
G
High collector to emitter voltage V
CEO
.
G
Optimum for the driver stage of a low-frequency and 25 to 30W
output amplifier.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
5.0
±
0.2
4.0
±
0.2
5
±
0
1
±
0
0.45
+0.2
0.45
+0.2
1.27
1.27
2
±
0
2.54
±
0.15
2
1
3
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
80
70
5
1
0.5
750
150
–55 ~ +150
Unit
V
V
V
A
A
mW
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1*1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= 20V, I
E
= 0
I
C
= 10
μ
A, I
E
= 0
I
C
= 2mA, I
B
= 0
I
E
= 10
μ
A, I
C
= 0
V
CE
= 10V, I
C
= 150mA
*2
V
CE
= 10V, I
C
= 500mA
*2
I
C
= 300mA, I
B
= 30mA
*2
I
C
= 300mA, I
B
= 30mA
*2
V
CB
= 10V, I
E
= –50mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
min
80
70
5
85
40
typ
160
100
0.2
0.85
120
11
max
0.1
340
0.6
1.5
20
Unit
μ
A
V
V
V
V
V
MHz
pF
*1
h
FE1
Rank classification
Rank
Q
R
S
h
FE1
85 ~ 170
120 ~ 240
170 ~ 340
*2
Pulse measurement
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| 2SC1324 | NPN EPITAXIAL PLANAR TYPE(Broadband amplifiers from VHF to UHF band) |
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| 2SC1335 | LOW FREQUENCY LOW NOISE AMPLIFIER |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC1318AQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 500MA I(C) | TO-226AA |
| 2SC1318AR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 500MA I(C) | TO-226AA |
| 2SC1318ARA | 功能描述:TRANS NPN 70VCEO 500MA TO-92 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SC1318AS | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 500MA I(C) | TO-226AA |
| 2SC1318ATA | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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