參數(shù)資料
型號(hào): 2SC1359
廠商: PANASONIC CORP
元件分類(lèi): 小信號(hào)晶體管
英文描述: Silicon NPN epitaxial planer type(For high-frequency amplification)
中文描述: 30 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: TO-92-B1, 3 PIN
文件頁(yè)數(shù): 1/3頁(yè)
文件大?。?/td> 52K
代理商: 2SC1359
1
Transistor
2SC1359
Silicon NPN epitaxial planer type
For high-frequency amplification
Complementary to 2SA838
I
Features
G
Optimum for RF amplification of FM/AM radios.
G
High transition frequency f
T
.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
5.0
±
0.2
4.0
±
0.2
5
±
0
1
±
0
0.45
+0.2
0.45
+0.2
1.27
1.27
2
±
0
2.54
±
0.15
2
1
3
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
30
20
5
30
400
150
–55 ~ +150
Unit
V
V
V
mA
mW
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Forward current transfer ratio
Transition frequency
Noise figure
Reverse transfer impedance
Common emitter reverse transfer capacitance
Symbol
I
CBO
h
FE*
f
T
NF
Z
rb
C
re
Conditions
V
CB
= 10V, I
E
= 0
V
CB
= 10V, I
E
= –1mA
V
CB
= 10V, I
E
= –1mA, f = 200MHz
V
CB
= 10V, I
E
= –1mA, f = 5MHz
V
CB
= 10V, I
E
= –1mA, f = 2MHz
V
CE
= 10V, I
C
= 1mA, f = 10.7MHz
min
70
150
typ
250
2.8
22
0.9
max
0.1
220
4
50
1.5
Unit
μ
A
MHz
dB
pF
*
h
FE
Rank classification
Rank
B
C
h
FE
70 ~ 140
110 ~ 220
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