參數(shù)資料
型號: 2SC2510A
廠商: Toshiba Corporation
英文描述: SILICON NPN EPITAXIAL PLANAR TYPE
中文描述: 硅型瑞展
文件頁數(shù): 1/4頁
文件大?。?/td> 194K
代理商: 2SC2510A
2SC2510A
2007-11-01
1
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
2SC2510A
2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS
(28V SUPPLY VOLTAGE USE)
z
Specified 28V, 28MHz Characteristics
z
Output Power
: Po = 150W
PEP
(Min.)
z
Power Gain
: Gp = 12.2dB (Min.)
z
Collector Efficiency
:
η
C
= 35% (Min.)
z
Intermodulation Distortion IMD =
30dB (Max.)
ABSOLUTE MAXIMUM RATINGS
(Tc = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
60
V
Collector-Emitter Voltage
V
CES
60
V
Collector-Emitter Voltage
V
CEO
35
V
Emitter-Base Voltage
V
EBO
4
V
Collector Current
I
C
20
A
Collector Power Dissipation
P
C
250
W
Junction Temperature
T
j
175
°C
Storage Temperature Range
T
stg
65~175
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
MARKING
Dot
Lot No.
JEDEC
EIAJ
TOSHIBA
Weight: 5.2g
2
13B1A
Unit in mm
2SC2510
JAPAN
TOSHIBA
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