參數(shù)資料
型號: 2SC2510A
廠商: Toshiba Corporation
英文描述: SILICON NPN EPITAXIAL PLANAR TYPE
中文描述: 硅型瑞展
文件頁數(shù): 2/4頁
文件大?。?/td> 194K
代理商: 2SC2510A
2SC2510A
2007-11-01
2
ELECTRICAL CHARACTERISTICS
(Tc = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector-Emitter Breakdown Voltage
V
(BR) CEO
I
C
= 100mA, I
B
= 0
35
V
Collector-Emitter Breakdown Voltage
V
(BR) CES
I
C
= 100mA, V
EB
= 0
55
V
Emitter-Base Breakdown Voltage
V
(BR) EBO
I
E
= 1mA, I
C
= 0
4
V
DC Current Gain
h
FE
V
CE
= 5V, I
C
= 10A *
10
Collector Output Capacitance
C
ob
V
CB
= 28V, I
E
= 0
f = 1MHz
450
600
pF
Power Gain
G
p
12.2
13.3
dB
Input Power
P
i
7
9
W
PEP
Collector Efficiency
η
C
35
%
Intermodulation Distortion
IMD
V
CC
= 28V, f
1
= 28.000MHz,
f
2
= 28.001MHz
I
idle
= 100mA
Po = 150W
PEP
(Fig.)
30
dB
Series Equivalent Input Impedance
Z
in
1.4
j0.9
Series Equivalent Output Impedance
Z
out
V
CC
= 28V, f
1
= 28.000MHz,
f
2
= 28.001MHz,
Po = 150W
PEP
2.3
j0.9
* Pulse Test:
Pulse Width
100
μ
s, Duty Cycle
3%
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