參數(shù)資料
型號(hào): 2SC2585
廠商: ADVANCED SEMICONDUCTOR INC
元件分類: 小信號(hào)晶體管
英文描述: NPN SILICON RF TRANSISTOR
中文描述: X BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
文件頁(yè)數(shù): 1/1頁(yè)
文件大?。?/td> 20K
代理商: 2SC2585
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
I
CBO
V
CB
= 8.0 V
I
EBO
V
EB
= 1.0 V
h
FE
V
CE
= 8.0 V I
C
= 7.0 mA
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
μ
A
μ
A
---
100
100
50
115
250
f
t
V
CE
= 8.0 V I
C
= 20 mA
V
CB
= 10 V
f = 1.0 GHz
8.5
GHz
C
cb
f = 1.0 MHz
0.2
0.6
pF
|
S21E
|
2
V
CE
= 8.0 V
I
C
= 20 mA f = 1.0 GHz
f = 2.0 GHz
f = 4.0 GHz
10.0
18.0
11.0
6.5
dB
G
NF
V
CE
= 8.0 V I
C
= 7.0 mA
V
CE
= 8.0 V I
C
= 10 mA
f = 2.0 GHz
11.0
dB
M
AG
f = 2.0 GHz
f = 4.0 GHz
15.0
10.0
dB
NF
V
CE
= 8.0 V I
C
= 7.0 mA f = 2.0 GHz
2.0
2.5
dB
NPN SILICON RF TRANSISTOR
2SC2585
DESCRIPTION:
The
2SC2585
is a Common Emitter
Device Designed for Low Niose
Amplifier and Medium Power Oscillator
Applications up to 8.5 GHz.
MAXIMUM RATINGS
I
C
65 mA
V
CEO
12 V
V
CBO
25 V
V
EB
1.5 V
P
T
400 mW @ T
C
= 166
O
C
-65
O
C to +200
O
C
-65
O
C to +200
O
C
85
O
C/W
T
J
T
STG
θ
JC
PACKAGE STYLE
DIMENSIONS IN MILLIMETERS
1 = BASE 3 = COLLECTOR
2 & 4 = EMITTER
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