參數(shù)資料
型號: 2SC2879A
廠商: Toshiba Corporation
元件分類: 基準電壓源/電流源
英文描述: SILICON NPN EPITAXIAL PLANAR TYPE 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE)
中文描述: 硅型瑞展2?30MHz的辦學(xué)線性功率放大器應(yīng)用(低電源電壓使用)
文件頁數(shù): 2/4頁
文件大?。?/td> 196K
代理商: 2SC2879A
2SC2879A
2007-11-01
2
ELECTRICAL CHARACTERISTICS
(Tc = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector-Emitter Breakdown Voltage
V
(BR) CEO
I
C
= 100mA, I
B
= 0
18
V
Collector-Emitter Breakdown Voltage
V
(BR) CES
I
C
= 100mA, V
EB
= 0
45
V
Emitter-Base Breakdown Voltage
V
(BR) EBO
I
E
= 1mA, I
C
= 0
4
V
DC Current Gain
h
FE
V
CE
= 5V, I
C
= 10A
10
150
Collector Output Capacitance
C
ob
V
CB
= 12.5V, I
E
= 0
f = 1MHz
700
pF
G
p
13.0
15.2
dB
Input Power
Pi
6
10
W
PEP
Collector Efficiency
η
C
35
%
Intermodulation Distortion
IMD
V
CC
= 12.5V, f
1
= 28.000MHz
f
2
= 28.001MHz
I
idle
= 100mA
Po = 100W
PEP
.(Fig.)
24
dB
Series Equivalent Input Impedance
Z
in
1.45
j0.95
Series Equivalent Output Impedance
Z
out
V
CC
= 12.5V, f = 28MHz
Δ
f = 1kHz, Po = 100W
PEP
1.45
j1.0
相關(guān)PDF資料
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