| 型號 | 廠商 | 描述 |
| 2sc2703 2 |
Toshiba Corporation | TRANSISTOR (AUDIO POWER AMPLIFIER APPLICATIONS) |
| 2sc2705 2 |
Toshiba Corporation | TRANSISTOR (AUDIO FREQUENCY AMPLIFIER APPLICATIONS) |
| 2sc2710 2 |
Toshiba Corporation | TRANSISTOR (FOR AUDIO AMPLIFIER APPLICATIONS) |
| 2sc2712 2 3 |
Toshiba Corporation | TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLFIER APPLICATIONS) |
| 2sc2713 2 3 4 |
Toshiba Corporation | TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) |
| 2sc2714 2 3 4 5 6 |
Toshiba Corporation | TRANSISTOR (HIGH FREQUENCY, FM, RF, MIX, IF AMPLIFIER APPLICATIONS |
| 2sc2715 2 3 4 5 6 7 |
Toshiba Corporation | TRANSISTOR (HIGH FREQUENCY AMPLIFIER APPLICATIONS) |
| 2sc2716 2 3 |
Toshiba Corporation | TRANSISTOR (HIGH FREQUENCY, AM HIGH FREQUENCY AMPLIFIER, AM FREQUENCY CONVERTER APPLICATIONS) |
| 2sc2717 2 3 |
Toshiba Corporation | TRANSISTOR (HIGH FREQUENCY, AM HIGH FREQUENCY AMPLIFIER, AM FREQUENCY CONVERTER APPLICATIONS) |
| 2sc2216 2 3 |
Toshiba Corporation | TRANSISTOR (TV FINAL PICTURE IF AMPLIFIER APPLICATIONS) |
| 2sc2738 2 |
Electronic Theatre Controls, Inc. | Silicon NPN Triple Diffused Power Transistors |
| 2sc2740 |
Electronic Theatre Controls, Inc. | Si NPN Triple Diffused Junction Mesa |
| 2sc2750 2 3 |
Electronic Theatre Controls, Inc. | High Speed High Current Switching Industrial Use |
| 2sc2753 2 3 |
Toshiba Corporation | TRANSISTOR (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
| 2sc2778 2 3 |
PANASONIC CORP | Silicon NPN epitaxial planer type(For high-frequency amplification) |
| 2sc2782a 2 3 4 |
Toshiba Corporation | Variable Capacitance Diode for BS/CS Tuner Tuning; Ratings VR (V): 30; Characteristics n: 9.0 min; Characteristics rs (ohm) max: 2.2; Characteristics C (pF) max: C1 = 5.16 to 7.22 C25 = 0.48 to 0.76; Characteristics CVR/CVR: 1/25; Cl: -; Package: SFP |
| 2sc2782 2 |
Toshiba Corporation | TRANSISTOR (VHF BAND POWER AMPLIFIER APPLICATIONS) |
| 2sc2783 2 |
Toshiba Corporation | TRANSISTOR (UHF BAND POWER AMPLIFIER APPLICATIONS) |
| 2sc2791 2 |
Toshiba Corporation | SILICON NPN TRIPLE DIFFUSED TYPE |
| 2sc2792 2 |
Toshiba Corporation | TRANSISTOR (SWITCHING REGULATOR AND HIGH VOLTAGE, HIGH SPEED DC-DC CONVERTER APPLICATIONS) |
| 2sc2793 2 |
Toshiba Corporation | SILICON NPN TRIPLE DIFFUSED TYPE |
| 2sc2800 2 3 |
Mitsubishi Electric Corporation | NPN SPITAXIAL PLANAR TYPE |
| 2sk3269 2 3 |
PANASONIC CORP | N-channel enhancement mode MOSFET |
| 2sc2824 2 3 |
Toshiba Corporation | SILICON NPN EPITAXIAL TYPE(PCT PROCESS) |
| 2sc2831 |
Electronic Theatre Controls, Inc. | Si NPN Triple Diffused Junction Mesa |
| 2sc2831a |
Electronic Theatre Controls, Inc. | Si NPN Triple Diffused Junction Mesa |
| 2sc2832 |
Electronic Theatre Controls, Inc. | Si NPN Triple Diffused Junction Mesa |
| 2sc2832a |
Electronic Theatre Controls, Inc. | Si NPN Triple Diffused Junction Mesa |
| 2sc2833 |
Electronic Theatre Controls, Inc. | Si NPN Triple Diffused Junction Mesa |
| 2sc2833a |
Electronic Theatre Controls, Inc. | Si NPN Triple Diffused Junction Mesa |
| 2sc2834 |
Electronic Theatre Controls, Inc. | Silicon NPN Triple-Diffused Junction Mesa Type |
| 2sc2834a |
Electronic Theatre Controls, Inc. | Silicon NPN Triple-Diffused Junction Mesa Type |
| 2sc2840 2 3 4 |
Sanyo Electric Co.,Ltd. | NPN Epitaxial Planar Type Silicon Transistor |
| 2sc2845 2 3 4 5 6 |
PANASONIC CORP | Shrink Tubing; Tubing Size Diameter:0.125"; Wall Thickness Recovered Nominal:0.038"; Inner Diameter Max Recovered:0.023"; Expanded Inner Diameter:0.125"; Material:Polyolefin |
| 2sc2859 2 |
Toshiba Corporation | TRANSISTOR (AUDIO FREQUENCY LOW POWER, DRIVER STAGE AMPLIFIER, SWITCHING APPLICATIONS) |
| 2sc2860 2 3 4 5 6 |
Panasonic Corporation | Si NPN Epitaxial Planar |
| 2sc2873 2 3 4 |
Toshiba Corporation | TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS) |
| 2sc2878 2 3 4 |
Toshiba Corporation | TRANSISTOR (FOR MUTING AND SWITCHING APPLICATIONS) |
| 2sd1222 2 3 4 |
Toshiba Corporation | NPN EPITAXIAL TYPE (SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE, POWER AMPLIFIER APPLICATIONS) |
| 2sc2879a 2 3 4 |
Toshiba Corporation | SILICON NPN EPITAXIAL PLANAR TYPE 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) |
| 2sc2879 2 |
Toshiba Corporation | TRANSISTOR (2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS)(LOW SUPPLY VOLTAGE USE) |
| 2sc2880 2 3 |
Toshiba Corporation | TRANSISTOR (HIGH VOLTAGE SWITCHING APPLICATIONS) |
| 2sc2881 2 |
Toshiba Corporation | TRANSISTOR (POWER AMPLIFIER APPLICATIONS) |
| 2sc2882 2 3 |
Toshiba Corporation | TRANSISTOR (POWER, VOLTAGE AMPLIFIER APPLICATIONS) |
| 2sc2883 2 |
Toshiba Corporation | TRANSISTOR (AUDIO FREQUENCY AMPLIFIER APLICATIONS) |
| 2sc2884 2 3 |
Toshiba Corporation | TRANSISTOR (AUDIO FREQUENCY AMPLIFIER APPLICATIONS) |
| 2sc2893 |
ADVANCED SEMICONDUCTOR INC | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| 2sc2904 2 3 |
Mitsubishi Electric Corporation | NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR) |
| 2sc2905 2 3 |
Mitsubishi Electric Corporation | NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR) |
| 2sc2925 2 |
PANASONIC CORP | Silicon NPN epitaxial planer type(For low-frequency output amplification0 |