參數(shù)資料
型號(hào): 2SC2925
廠商: PANASONIC CORP
元件分類: 小信號(hào)晶體管
英文描述: Silicon NPN epitaxial planer type(For low-frequency output amplification0
中文描述: 700 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: ROHS COMPLIANT, SC-43A, TO-92-B1, 3 PIN
文件頁(yè)數(shù): 1/2頁(yè)
文件大小: 36K
代理商: 2SC2925
1
Transistor
2SC2925
Silicon NPN epitaxial planer type
For low-frequency output amplification
I
Features
G
High foward current transfer ratio h
FE
.
G
Low collector to emitter saturation voltage V
CE(sat)
.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
5.0
±
0.2
4.0
±
0.2
5
±
0
1
±
0
0.45
+0.2
0.45
+0.2
1.27
1.27
2
±
0
2.54
±
0.15
2
1
3
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
60
50
15
1.5
0.7
750
150
–55 ~ +150
Unit
V
V
V
A
A
mW
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE*
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 20V, I
E
= 0
V
CE
= 20V, I
B
= 0
I
C
= 10
μ
A, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10
μ
A, I
C
= 0
V
CE
= 10V, I
C
= 150mA
I
C
= 500mA, I
B
= 50mA
V
CB
= 10V, I
E
= –10mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
min
60
50
15
400
typ
1000
0.15
200
11
max
1
10
2000
0.4
15
Unit
μ
A
μ
A
V
V
V
V
MHz
pF
*
h
FE
Rank classification
Rank
R
S
T
h
FE
400 ~ 800
600 ~ 1200 1000 ~ 2000
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