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參數(shù)資料
| 型號： | 2SC3460 |
| 元件分類： | 功率晶體管 |
| 英文描述： | 6 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-218 |
| 封裝： | TO-3PB, 3 PIN |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 37K |
| 代理商： | 2SC3460 |
2SC3460
No.1594–3/4
0.1
35
7
1.0
23
5
7
10
2
SW Time -- IC
ITR05606
5
7
3
2
0.1
5
7
3
2
5
3
2
1.0
5
7
0.1
1.0
5
7
3
2
5
7
3
2
3
25
0.1
1.0
3
25
10
3
25
3
25
100
1000
Rth(t) -- t
ITR05609
0
120
80
100
60
40
20
060
40
80
100
140
120
160
PC -- Ta
ITR05610
0.1
1.0
5
3
2
5
3
10
2
5
3
1.0
10
0.1
5
7
5
7
3
2
5
7
3
2
100
10
57
2
3
35
7
2
3
5
7 1000
100
57
2
5
37
1000
10ms
ICP=20A
IC=6A
Tc=25
°C
Single pulse
ITR05607
Forward Bias A S O
1ms
100
s
ITR05608
Reverse Bias A S O
DC
operation
tstg
ton
t f
Tc=25
°C
L=200
H
IB2=--0.6A
7
6
5
4
3
2
1
0
0.2
0.4
0.6
0.8
1.0
1.2
IC -- VBE
ITR05605
T
a=120
°C
25
°C
--40
°C
VCE=5V
Tc=25
°C
P
C 100W
IC
Test Circuit
VCC=20V
TUT
L
IB1
--IB2
--5V
Collector
Current,
I C
–
A
Base-to-Emitter Voltage, VBE – V
Collector Current, IC – A
Switching
Time,
SW
time
–
s
Collector
Current,
I C
–
A
Collector-to-Emitter Voltage, VCE – V
Collector
Current,
I C
–
A
Collector-to-Emitter Voltage, VCE – V
Collector
Dissipation,
P
C
–
W
Ambient Temperature, Ta –C
Transient
Thermal
Resistance,
Rth(t)
–
°C
/
W
Time, t – ms
相關PDF資料 |
PDF描述 |
|---|---|
| 2SC3460-L | 6 A, 800 V, NPN, Si, POWER TRANSISTOR |
| 2SC3460K | 6 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-218 |
| 2SC3466K | 8 A, 650 V, NPN, Si, POWER TRANSISTOR, TO-218 |
| 2SC3466M | 8 A, 650 V, NPN, Si, POWER TRANSISTOR, TO-218 |
| 2SC3466 | 8 A, 650 V, NPN, Si, POWER TRANSISTOR, TO-218 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC3466 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANS. TO-3PB 1200V 8A 120W BCE |
| 2SC3467D | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR 制造商:TT Electronics / Semelab 功能描述:NPN transistor,2SC3467D 0.1A Ic 10Vce |
| 2SC3467E | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR (86I |
| 2SC3468 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC3468E | 制造商:Sony Semiconductor Solutions Division 功能描述: |
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