2SC3651
No.1779-1/4
Applications
LF amplifiers, various drivers, muting circuit.
Features
High DC current gain (hFE=500 to 2000).
High breakdown voltage (VCEO≥100V).
Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).
High VEBO (VEBO≥15V).
Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
120
V
Collector-to-Emitter Voltage
VCEO
100
V
Emitter-to-Base Voltage
VEBO
15
V
Collector Current
IC
200
mA
Collector Current (Pulse)
ICP
300
mA
Collector Dissipation
PC
500
mW
Mounted on a ceramic board (250mm2
0.8mm)
1.3
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Marking : CG
Ordering number : EN1779B
31010LA TK IM / 61704TN (PC)/N2098HA (KT)/4217KI/2145KI, TS
SANYO Semiconductors
DATA SHEET
2SC3651
NPN Epitaxial Planar Silicon Transistor
High hFE, Low-Frequency
General-Purpose Amplifier Applications
www.semiconductor-sanyo.com/network
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
's products or
equipment.
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