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參數(shù)資料
| 型號(hào)： | 2SC4081RT1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | CASE 419-04, SC-70, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 42K |
| 代理商： | 2SC4081RT1 |
Semiconductor Components Industries, LLC, 2006
May, 2006 Rev. 4
Publication Order Number:
2SC4081RT1/D
1
2SC4081RT1
General Purpose
Amplifier Transistor
NPN Surface Mount
Features
Moisture Sensitivity Level: 1
PbFree Package is Available
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
CollectorBase Voltage
V(BR)CBO
60
Vdc
CollectorEmitter Voltage
V(BR)CEO
50
Vdc
EmitterBase Voltage
V(BR)EBO
7.0
Vdc
Collector Current Continuous
IC
100
mAdc
Collector Current Peak
IC(P)
200
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Power Dissipation
PD
200
mW
Junction Temperature
TJ
150
°C
Storage Temperature
Tstg
55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
CollectorEmitter Breakdown Voltage
(IC = 2.0 mAdc, IB = 0)
V(BR)CEO
50
Vdc
CollectorBase Breakdown Voltage
(IC = 10 mAdc, IE = 0)
V(BR)CBO
60
Vdc
EmitterBase Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
7.0
Vdc
CollectorBase Cutoff Current
(VCB = 60 Vdc, IE = 0)
ICBO
0.1
mAdc
CollectorEmitter Cutoff Current
(VCE = 10 Vdc, IB = 0)
(VCE = 30 Vdc, IB = 0)
(VCE = 30 Vdc, IB = 0, TA = 80°C)
ICEO
0.1
2.0
1.0
mAdc
DC Current Gain (Note 1)
(VCE = 6.0 Vdc, IC = 2.0 mAdc)
hFE
180
390
CollectorEmitter Saturation Voltage
(IC = 100 mAdc, IB = 10 mAdc)
VCE(sat)
0.5
Vdc
1. Pulse Test: Pulse Width
≤ 300 ms, D.C. ≤ 2%.
SC70
CASE 419
MARKING DIAGRAM
2
1
3
81 M
G
COLLECTOR
3
1
BASE
2
EMITTER
Device*
Package
Shipping
ORDERING INFORMATION
2SC4081RT1
SC70
3000/Tape & Reel
*The “T1” suffix refers to a 7 inch reel.
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
http://onsemi.com
2SC4081RT1G
SC70
(PbFree)
3000/Tape & Reel
81
= Device Code
M
= Date Code*
G
= PbFree Package
1
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC4081RT1G | 功能描述:兩極晶體管 - BJT 100mA 60V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC4081S | 制造商:ROHM 制造商全稱:Rohm 功能描述:TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SC-70 |
| 2SC4081T106 | 制造商:ROHM Semiconductor 功能描述: 制造商:ROHM Semiconductor 功能描述:150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC4081T106Q | 功能描述:兩極晶體管 - BJT NPN 50V 0.15A SOT-323 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC4081T106Q/R | 制造商:ROHM Semiconductor 功能描述:Transistor, NPN, General Purpose, 50V, |
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