SILICON TRANSISTOR
2SC4092
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
4 PINS MINI MOLD
DATA SHEET
Document No. P10363EJ1V1DS00 (1st edition)
Date Published March 1997 N
Printed in Japan
1987
DESCRIPTION
The 2SC4092 is an NPN silicon epitaxial transistor designed for low-
noise amplifier at VHF, UHF band.
It is contained in 4 pins mini-mold package which enables high-isolation
gain.
FEATURES
NF = 1.5 dB TYP. @f = 1.0 GHz, V
CE
= 10 V, I
C
= 5 mA
S
21e
2
= 12 dB TYP. @f = 1.0 GHz, V
CE
= 10 V, I
C
= 20 mA
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
25
12
3.0
70
200
150
V
V
V
mA
mW
°
C
°
C
65 to +150
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cutoff Current
I
CBO
0.1
μ
A
V
CB
= 15 V, I
E
= 0
Emitter Cutoff Current
I
EBO
0.1
μ
A
V
EB
= 2.0 V, I
C
= 0
DC Current Gain
h
FE
40
200
V
CE
= 10 V, I
C
= 20 mA
Gain Bandwidth Product
f
T
6
GHz
V
CE
= 10 V, I
C
= 20 mA f = 1.0 GHz
Output Capacitance
C
ob
0.55
0.9
pF
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
Insertion Power Gain
S
21e
2
9.5
12
dB
V
CE
= 10 V, I
C
= 20 mA, f = 1.0 GHz
Noise Figure
NF
1.5
3.0
dB
V
CE
= 10 V, I
C
= 5 mA, f = 1.0 GHz
Maximum Available Gain
MAG
14.5
dB
V
CE
= 10 V, I
C
= 20 mA, f = 1.0 GHz
h
FE
Classification
Class
R4/RD *
R5/RE *
Marking
R4
R5
h
FE
40 to 120
100 to 200
* Old Specification / New Specification
PACKAGE DIMENSIONS
(Units: mm)
PIN CONNECTIONS
1.
2.
3.
4.
Emitter
Collector
Emitter
Base
5
°
5
°
5
°
5
°
0
0
2
(
(
0
0
1
+
0
0
+
0
0
4
1
3
2
+
0
2.8
1.5
+0.2
0.3
+0.2
0.1
0
+
0
0
+
0
0
+
0