- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄30554 > 2SC4410G (PANASONIC CORP) 10 mA, 7 V, NPN, Si, SMALL SIGNAL TRANSISTOR PDF資料下載
參數(shù)資料
| 型號： | 2SC4410G |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 10 mA, 7 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, SSMINI3-F2, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 284K |
| 代理商： | 2SC4410G |
Transistors
1
Publication date: Ma
y 2007
SJC00365AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC4410G
Silicon NPN epitaxial planar type
For UHF amplification
■ Features
Allowing the small current and low voltage operation
High transition frequency f
T
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base cutoff current (Emitter open)
ICBO
VCB
= 10 V, I
E
= 01
A
Emitter-base cutoff current (Collector open)
IEBO
VEB = 1.5 V, IC = 01
A
Forward current transfer ratio
hFE
VCE = 1 V, IC = 1 mA
50
200
Transition frequency
fT
VCE
= 1 V, I
C
= 1 mA, f = 0.8 GHz
4
GHz
Collector output capacitance
Cob
VCB
= 1 V, I
E
= 0, f = 1 MHz
0.4
pF
(Common base, input open circuited)
Foward transfer gain
S
21e
2
VCE = 1 V, IC = 1 mA, f = 0.8 GHz
6.0
dB
Maximum unilateral power gain
GUM
VCE = 1 V, IC = 1 mA, f = 0.8 GHz
15
dB
Noise figure
NF
VCE
= 1 V, I
C
= 1 mA, f = 0.8 GHz
3.5
dB
■ Electrical Characteristics T
a
= 25°C ± 3°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
10
V
Collector-emitter voltage (Base open)
VCEO
7V
Emitter-base voltage (Collector open)
VEBO
2V
Collector current
IC
10
mA
Collector power dissipation
PC
50
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. Handle the product with care because this is sensitive to the electrostatic breakdown by its structure
■ Package
Code
SMini3-F2
Marking Symbol: 2X
Pin Name
1: Base
2: Emitter
3: Collector
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
相關PDF資料 |
PDF描述 |
|---|---|
| 2SC4412-5 | 50 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 2SC44124 | 50 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC44124 | 50 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC4412 | 50 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 2SC44125 | 50 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC4413-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANS NPN 50V 0.1A SOT323 |
| 2SC4418LF608 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC4420 | 功能描述:TRANS NPN 800VCEO 3A TOP-3F RoHS:是 類別:分離式半導體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SC444 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR60V .5A .8W |
| 2SC4440 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANSISTOR TO-2 600V 7A 30W ECB |
發(fā)布緊急采購，3分鐘左右您將得到回復。