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參數(shù)資料
| 型號： | 2SC4467 |
| 廠商： | SANKEN ELECTRIC CO LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN Triple Diffused Planar Transistor(硅NPN三倍擴(kuò)散平面晶體管) |
| 中文描述： | 8 A, 120 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | MT-100, TO-3P, 3 PIN |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 24K |
| 代理商： | 2SC4467 |
107
Silicon NPN Triple Diffused Planar Transistor
(Complement to type 2SA1694)
Application :
Audio and General Purpose
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC4467
160
120
6
8
3
80(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
I
Absolute maximum ratings
I
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
2SC4467
10
max
10
max
120
min
50
min
1.5
max
20
typ
200
typ
Unit
μ
A
μ
A
V
V
MHz
pF
Conditions
V
CB
=160V
V
EB
=6V
I
C
=50mA
V
CE
=4V, I
C
=3A
I
C
=3A, I
B
=0.3A
V
CE
=12V, I
E
=–0.5A
V
CB
=10V, f=1MHz
2S C4467
(Ta=25°C)
(Ta=25°C)
I
C
–V
CE
Characteristics
(Typical)
h
FE
–I
C
Characteristics
(Typical)
h
FE
–I
C
Temperature
Characteristics
(Typical)
θ
j-a
–t
Characteristics
I
C
–V
BE
Temperature
Characteristics
(Typical)
V
CE
(sat)–I
B
Characteristics
(Typical)
Pc–Ta Derating
Safe Operating Area
(Single Pulse)
f
T
–I
E
Characteristics
(Typical)
0
3
2
1
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Base Current I
B
(A)
C
C
(
I
C
=8A
2A
4A
0
8
6
2
4
0
1.5
1.0
0.5
Base-Emittor Voltage V
BE
(V)
C
C
(
(V
CE
=4V)
1(a m
2CaTp
–Cse
80
60
40
20
3.5
00
25
50
75
100
125
150
Ambient Temperature Ta(C)
M
C
(
WthIninteheasnk
Without Heatsink
10
Collector-Emitter Voltage V
CE
(V)
50
5
100
200
0.1
1
0.5
10
20
5
C
C
(
Without Heatsink
Natural Cooling
DC
100ms
10ms
0.02
0.1
0.5
1
5
8
20
50
100
200
Collector Current I
C
(A)
D
F
(V
CE
=4V)
Typ
0
0
2
4
6
8
2
1
3
4
Collector-Emitter Voltage V
CE
(V)
C
C
(
100mA
150mA
200mA
3m
75mA
50mA
20mA
I
B
=10mA
(V
CE
=4V)
0.02
0.5
5
8
1
20
50
200
100
0.1
Collector Current I
C
(A)
D
F
125C
25C
–30C
0
–0.1
–1
–8
10
20
40
30
C
T
(
Z
)
(V
CE
=12V)
Emitter Current I
E
(A)
Typ
0.3
1
3
0.5
1
10
100
1000
Time t(ms)
T
θ
j
(
I
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
40
10
4
R
L
(
)
I
C
(A)
V
(V)
–5
I
B2
(A)
–0.4
t
on
(
μ
s)
0.13
typ
t
stg
(
μ
s)
3.50
typ
t
f
(
μ
s)
0.32
typ
I
(A)
0.4
V
(V)
10
External Dimensions
MT-100(TO3P)
15.6
±0.4
9.6
1
±
4
2
5
±
1
3.2
±0.1
2
3
1.05
+0.2
-0.1
2
4
B
E
5.45
±0.1
5.45
±0.1
C
4.8
±0.2
0.65
+0.2
-0.1
1.4
2.0
±0.1
a
b
Weight : Approx 6.0g
a. Type No.
b. Lot No.
h
FE
Rank O(50to100), P(70to140), Y(90to180)
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