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參數(shù)資料
| 型號(hào)： | 2SC4512 |
| 廠商： | SANKEN ELECTRIC CO LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN Triple Diffused Planar Transistor(硅NPN三倍擴(kuò)散平面晶體管) |
| 中文描述： | 6 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | MT-25, TO-220, 3 PIN |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 23K |
| 代理商： | 2SC4512 |
111
Silicon NPN Triple Diffused Planar Transistor
(Complement to type 2SA1726)
2S C4512
Application :
Audio and General Purpose
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC4512
120
80
6
6
3
50(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
I
Absolute maximum ratings
I
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
2SC4512
10
max
10
max
80
min
50
min
0.5
max
20
typ
110
typ
Unit
μ
A
μ
A
V
V
MHz
pF
Conditions
V
CB
=120V
V
EB
=6V
I
C
=25mA
V
CE
=4V, I
C
=2A
I
C
=5A, I
B
=0.2A
V
CE
=12V, I
E
=–0.5A
V
CB
=10V, f=1MHz
(Ta=25°C)
(Ta=25°C)
I
C
–V
CE
Characteristics
(Typical)
h
FE
–I
C
Characteristics
(Typical)
h
FE
–I
C
Temperature
Characteristics
(Typical)
θ
j-a
–t
Characteristics
I
C
–V
BE
Temperature
Characteristics
(Typical)
V
CE
(sat)–I
B
Characteristics
(Typical)
Pc–Ta Derating
Safe Operating Area
(Single Pulse)
f
T
–I
E
Characteristics
(Typical)
0
3
2
1
0
0.5
Base Current I
B
(A)
1.0
1.5
C
C
(
I
C
=6A
2A
4A
0
6
4
2
0
2
1
Base-Emittor Voltage V
BE
(V)
C
C
(
(V
CE
=4V)
1(a m
–CaTp
0.4
1
5
0.5
1
10
100
1000
2000
Time t(ms)
T
θ
j
(
50
40
30
20
10
2
00
25
50
75
100
125
150
Ambient Temperature Ta(C)
M
C
(
WthIninteheasnk
Without Heatsink
10
3
5
100
50
0.1
0.05
1
0.5
10
20
5
Collector-Emitter Voltage V
CE
(V)
C
C
(
Without Heatsink
Natural Cooling
DC
10ms
100ms
0.02
0.1
1
5 6
30
50
100
300
Collector Current I
C
(A)
D
F
(V
CE
=4V)
Typ
0
0
2
4
6
2
1
3
4
Collector-Emitter Voltage V
CE
(V)
C
C
(
80mA
50mA
30mA
20mA
150mA
100mA
I
B
=10mA
200mA
(V
CE
=4V)
0.02
0.5
0.5
6
5
1
20
50
200
100
0.1
Collector Current I
C
(A)
D
F
125C
25C
–30C
0
–0.1
–1
–6
20
10
40
30
C
T
(
Z
)
(V
CE
=12V)
Emitter Current I
E
(A)
Typ
I
Typical Switching Characteristics (Common Emitter)
R
L
(
)
10
3
V
CC
(V)
30
I
C
(A)
V
(V)
–5
I
B2
(A)
–0.3
t
on
(
μ
s)
0.16
typ
t
stg
(
μ
s)
2.60
typ
t
f
(
μ
s)
0.34
typ
I
(A)
0.3
V
(V)
10
External Dimensions
MT-25(TO220)
B
E
2.5
2.5
C
1
±
1
4
8
±
1.35
0.65
+0.2
-0.1
10.2
±0.2
3.75
±0.2
3
±
4.8
±0.2
1.4
2.0
±0.1
a
b
Weight : Approx 2.6g
a. Type No.
b. Lot No.
h
FE
Rank O(50to100), P(70to140), Y(90to180)
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PDF描述 |
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| 2SC4517A | Silicon NPN Triple Diffused Planar Transistor(High Voltage Switching Transistor)(硅NPN三倍擴(kuò)散平面晶體管（高壓開關(guān)晶體管）) |
| 2SC4517 | Silicon NPN Triple Diffused Planar Transistor(High Voltage Switching Transistor)(硅NPN三倍擴(kuò)散平面晶體管（高壓開關(guān)晶體管）) |
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