參數(shù)資料
型號： 2SC4517A
廠商： SANKEN ELECTRIC CO LTD
元件分類： 功率晶體管
英文描述： Silicon NPN Triple Diffused Planar Transistor(High Voltage Switching Transistor)(硅NPN三倍擴(kuò)散平面晶體管（高壓開關(guān)晶體管）)
中文描述： 3 A, 550 V, NPN, Si, POWER TRANSISTOR, TO-220AB
封裝： TO-220F, 3 PIN
文件頁數(shù)： 1/1頁
文件大?。?/td> 24K
代理商： 2SC4517A
112
Silicon NPN Triple Diffused Planar Transistor
(High Voltage Switchihg Transistor)
Application :
Switching Regulator and General Purpose
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC4517 2SC4517A
900 1000
550
7
3(
Pulse
6)
1.5
30(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
I
Absolute maximum ratings
I
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
2SC4517 2SC4517A
100
max
100
max
550
min
10to30
0.5
max
1.2
max
6
typ
35
typ
Unit
μ
A
μ
A
V
V
V
MHz
pF
Conditions
V
CB
=800V
V
EB
=7V
I
C
=10mA
V
CE
=4V, I
C
=1A
I
C
=1A, I
B
=0.2A
I
C
=1A, I
B
=0.2A
V
CE
=12V, I
E
=–0.25A
V
CB
=10V, f=1MHz
2SC4517/4517A
(Ta=25°C)
(Ta=25°C)
I
C
–V
CE
Characteristics
(Typical)
h
FE
–I
C
Temperature Characteristics
(Typical)
t
on
t
stg
t
f
–I
C
Characteristics
(Typical)
θ
j-a
–t
Characteristics
I
C
–V
BE
Temperature
Characteristics
(Typical)
V
CE
(sat),V
BE
(sat)–I
C
Temperature Characteristics
(Typical)
Pc–Ta Derating
Reverse Bias Safe Operating Area
Safe Operating Area
(Single Pulse)
0.03
0.1
0.05
1
5
0.5
0
1.5
1.0
0.5
C
C
(
B
B
(
Collector Current I
C
(A)
V
BE
(sat)
V
CE
(sat)
I
C
/I
B
=5 Const.
0.2
1
0.5
3
0.1
0.5
5
7
1
S
t
o
t
s
t
f
(
μ
s
Collector Current I
C
(A)
t
stg
t
on
t
f
V
CC
250V
I
C
:I
B1
:I
B2
=1:0.15:–0.45
0.3
1
4
0.5
1
10
100
1000
Time t(ms)
T
θ
j
(
30
20
10
2
00
25
50
75
100
125
150
Ambient Temperature Ta(C)
M
C
(
WthIninteheasnk
Without Heatsink
50
500
1000
100
1
0.5
0.1
0.01
0.05
10
5
Collector-Emitter Voltage V
CE
(V)
C
C
(
Without Heatsink
Natural Cooling
L=3mH
I
B2
=–1.0A
Duty:less than 1%
2SC4517
2SC4517A
10
50
5
2
100
1000
500
0.05
0.01
1
0.5
0.1
10
5
Collector-Emitter Voltage V
CE
(V)
C
C
(
100
μ
s
50
μ
s
Without Heatsink
Natural Cooling
0.02
0.1
0.05
1
3
0.5
5
10
50
Collector Current I
C
(A)
D
F
(V
CE
=4V)
125C
25C
–55C
0
3
1
2
0
0.4
0.6
0.8
1.0
0.2
Base-Emittor Voltage V
BE
(V)
C
C
(
(V
CE
=4V)
0
0
2
1
3
2
1
3
4
Collector-Emitter Voltage V
CE
(V)
C
C
(
300mA
400mA
200mA
150mA
100mA
I
B
=40mA
I
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
250
250
1
R
L
(
)
I
C
(A)
V
(V)
–5
I
B2
(A)
–0.45
t
on
(
μ
s)
0.7
max
t
stg
(
μ
s)
4
max
t
f
(
μ
s)
0.5
max
I
(A)
0.15
V
(V)
10
External Dimensions
FM20(TO220F)
3.3
±0.2
10.1
±0.2
4
±
1
±
1
8
±
0
±
3
±
2.54
2.54
1.35
±0.15
0.85
+0.2
-0.1
1.35
±0.15
2.2
±0.2
4.2
±0.2
2.8
c0.5
2.4
±0.2
0.45
+0.2
-0.1
B
E
C
a
b
Weight : Approx 2.0g
a. Type No.
b. Lot No.
相關(guān)PDF資料
PDF描述
2SC4517 Silicon NPN Triple Diffused Planar Transistor(High Voltage Switching Transistor)(硅NPN三倍擴(kuò)散平面晶體管（高壓開關(guān)晶體管）)
2SC4518A Silicon NPN Triple Diffused Planar Transistor(High Voltage Switching Transistor)(硅NPN三倍擴(kuò)散平面晶體管（高壓開關(guān)晶體管）)
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