- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370076 > 2SC4550 (NEC Corp.) NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING PDF資料下載
參數(shù)資料
| 型號： | 2SC4550 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING |
| 中文描述： | NPN硅外延的高晶體管高速開關(guān) |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 135K |
| 代理商： | 2SC4550 |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2002
Document No. D15596EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SC4550
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
The 2SC4550 is a power transistor developed for high-speed
switching and features low V
CE(sat)
and high h
FE
. This transistor is
ideal for use in drivers such as DC/DC converters and actuators.
In addition, a small resin-molded insulation type package
contributes to high-density mounting and reduction of mounting
cost.
FEATURES
High h
FE
and low V
CE(sat)
:
h
FE
≥
100 (V
CE
= 2 V, I
C
= 1.5 A)
V
CE(sat)
≤
0.3 V (I
C
= 4 A, I
B
= 0.2 A)
Mold package that does not require an insulating board or
insulation bushing
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°
C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
100
V
Collector to emitter voltage
V
CEO
60
V
Emitter to base voltage
V
EBO
7.0
V
Collector current (DC)
I
C(DC)
7.0
A
Collector current (pulse)
I
C(pulse)
*
14
A
Base current (DC)
I
B(DC)
3.5
A
Total power dissipation
P
T
(Tc = 25
°
C)
30
W
Total power dissipation
P
T
(Ta = 25
°
C)
2.0
W
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
55 to +150
°
C
* PW
≤
300
μ
s, duty cycle
≤
10%
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
1. Base
2. Collector
3. Emitter
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC4550K | SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits |
| 2SC4550L | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7A I(C) | TO-220VAR |
| 2SC4550M | SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits |
| 2SC4551 | NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING |
| 2SC4551K | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 10A I(C) | TO-220VAR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC4550-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:NPN PWR Transistor,60V,7.0A,isoTO-220 制造商:Renesas 功能描述:Trans GP BJT NPN 60V 7A 3-Pin(3+Tab) MP-45F |
| 2SC4550-AZ(K) | 制造商:Renesas Electronics 功能描述:NPN 制造商:Renesas Electronics 功能描述:NPN Bulk |
| 2SC4550-L-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC4551-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:NPN PWR Transistor,60V,10A,isoTO-220 制造商:Renesas 功能描述:Trans GP BJT NPN 60V 10A 3-Pin(3+Tab) MP-45F |
| 2SC4551-AZ(L) | 制造商:Renesas Electronics 功能描述:NPN 制造商:Renesas Electronics 功能描述:NPN Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復。