參數(shù)資料
型號(hào): 2SC4551K
廠(chǎng)商: NEC Corp.
英文描述: TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 10A I(C) | TO-220VAR
中文描述: 晶體管|晶體管|叩| 60V的五(巴西)總裁| 10A條一(c)|至220VAR
文件頁(yè)數(shù): 1/6頁(yè)
文件大?。?/td> 140K
代理商: 2SC4551K
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2002
Document No. D15597EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SC4551
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
The 2SC4551 is a power transistor developed for high-speed
switching and features low V
CE(sat)
and high h
FE
. This transistor is
ideal for use in drivers such as DC/DC converters and actuators.
In addition, a small resin-molded insulation type package
contributes to high-density mounting and reduction of mounting
cost.
FEATURES
High h
FE
and low V
CE(sat)
:
h
FE
100 (V
CE
= 2 V, I
C
= 2 A)
V
CE(sat)
0.3 V (I
C
= 6 A, I
B
= 0.3 A)
Mold package that does not require an insulating board or
insulation bushing
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°
C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
100
V
Collector to emitter voltage
V
CEO
60
V
Emitter to base voltage
V
EBO
7.0
V
Collector current (DC)
I
C(DC)
10
A
Collector current (pulse)
I
C(pulse)
*
20
A
Base current (DC)
I
B(DC)
5.0
A
Total power dissipation
P
T
(Tc = 25
°
C)
30
W
Total power dissipation
P
T
(Ta = 25
°
C)
2.0
W
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
55 to +150
°
C
* PW
300
μ
s, duty cycle
10%
PACKAGE DRAWING (UNIT: mm)
相關(guān)PDF資料
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