- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370076 > 2SC4551K (NEC Corp.) TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 10A I(C) | TO-220VAR PDF資料下載
參數(shù)資料
| 型號： | 2SC4551K |
| 廠商： | NEC Corp. |
| 英文描述： | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 10A I(C) | TO-220VAR |
| 中文描述： | 晶體管|晶體管|叩| 60V的五（巴西）總裁| 10A條一（c）|至220VAR |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 140K |
| 代理商： | 2SC4551K |
Data Sheet D15597EJ2V0DS
2
2SC4551
ELECTRICAL CHARACTERISTICS (Ta = 25
°
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector to emitter voltage
V
CEO(SUS)
I
C
= 6.0 A, I
B
= 0.6 A, L = 1 mH
60
V
Collector to emitter voltage
V
CEX(SUS)
I
C
= 6.0 A, I
B1
=
I
B2
= 0.6 A,
V
BE(OFF)
=
1.5 V, L = 180
μ
H, clamped
60
V
Collector cutoff current
I
CBO
V
CB
= 60 V, I
E
= 0
10
μ
A
Collector cutoff current
I
CER
V
CE
= 60 V, R
BE
= 50
, Ta = 125
°
C
1.0
mA
Collector cutoff current
I
CEX1
V
CE
= 60 V, V
BE(OFF)
=
1.5 V
10
μ
A
Collector cutoff current
I
CEX2
V
CE
= 60 V, V
BE(OFF)
=
1.5 V,
Ta = 125
°
C
1.0
mA
Emitter cutoff current
I
EBO
V
EB
= 5.0 V, I
C
= 0
10
μ
A
DC current gain
h
FE1
*
V
CE
= 2.0 V, I
C
= 1.0 A
100
DC current gain
h
FE2
*
V
CE
= 2.0 V, I
C
= 2.0 A
100
200
400
DC current gain
h
FE3
*
V
CE
= 2.0 V, I
C
= 6.0 A
60
Collector saturation voltage
V
CE(sat)1
*
I
C
= 6.0 A, I
B
= 0.3 A
0.3
V
Collector saturation voltage
V
CE(sat)2
*
I
C
= 8.0 A, I
B
= 0.4 A
0.5
V
Base saturation voltage
V
BE(sat)1
*
I
C
= 6.0 A, I
B
= 0.3 A
1.2
V
Base saturation voltage
V
BE(sat)2
*
I
C
= 8.0 A, I
B
= 0.4 A
1.5
V
Collector capacitance
C
ob
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
150
pF
Gain bandwidth product
f
T
V
CE
= 10 V, I
C
= 1.0 A
140
MHz
Turn-on time
t
on
0.3
μ
s
Storage time
t
stg
1.5
μ
s
Fall time
t
f
I
C
= 6.0 A, R
L
= 8.3
,
I
B1
=
I
B2
= 0.3 A, V
CC
50 V
Refer to the test circuit.
0.3
μ
s
* Pulse test PW
≤
350
μ
s, duty cycle
≤
2%
h
FE
CLASSIFICATION
Marking
M
L
K
h
FE2
100 to 200
150 to 300
200 to 400
SWITCHING TIME (t
on
, t
stg
, t
f
) TEST CIRCUIT
Base current
waveform
Collector current
waveform
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC4551L | SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits |
| 2SC4551M | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 10A I(C) | TO-220VAR |
| 2SC4552 | NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING |
| 2SC4552K | SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits |
| 2SC4552L | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 15A I(C) | TO-220VAR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC4551-M-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC4552-AZ | 制造商:Renesas Electronics 功能描述:Trans GP BJT NPN 60V 15A 3-Pin(3+Tab) MP-45F Cut Tape 制造商:Renesas Electronics Corporation 功能描述:NPN PWR Transistor,60V,15A,isoTO-220 制造商:Renesas 功能描述:Trans GP BJT NPN 60V 15A 3-Pin(3+Tab) MP-45F |
| 2SC4552-AZK | 制造商:Renesas Electronics 功能描述:NPN Bulk |
| 2SC4552-L-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC4553-AZ | 制造商:Renesas Electronics Corporation 功能描述:NPN PWR Transistor,100V,7.5A,isoTO-220 |
發(fā)布緊急采購，3分鐘左右您將得到回復。