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參數(shù)資料
| 型號： | 2SC458(K) |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | TO-92, 3 PIN |
| 文件頁數(shù)： | 4/4頁 |
| 文件大小： | 61K |
| 代理商： | 2SC458(K) |
2SC458 (K)
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
30
V
Collector to emitter voltage
V
CEO
30
V
Emitter to base voltage
V
EBO
5V
Collector current
I
C
100
mA
Emitter current
I
E
–100
mA
Collector power dissipation
P
C
200
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
30
—
V
I
C = 10 A, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
30
—
V
I
C = 1 mA, RBE =
Emitter to base breakdown
voltage
V
(BR)EBO
5—
—
V
I
E = 10 A, IC = 0
Collector cutoff current
I
CBO
—
0.5
A
V
CB = 18 V, IE = 0
Emitter cutoff current
I
EBO
—
1.0
A
V
EB = 4 V, IC = 0
DC current transfer ratio
h
FE*
1
100
—
500
V
CE = 1 V, IC = 10 mA
Collector to emitter saturation
voltage
V
CE(sat)
—
0.4
V
I
C = 10 mA, IB = 1 mA
Base to emitter voltage
V
BE(sat)
—
1.0
V
I
C = 10 mA, IB = 1 mA
Gain bandwidth product
f
T
100
—
MHz
V
CE = 10 V, IC = 10 mA
Collector output capacitance
Cob
—
4
pF
V
CB = 10 V, IE = 0, f = 1 MHz
Turn on time
t
on
—
80
—
ns
I
C = 10 IB1 = –10 IB2 = 10 mA,
V
CC = 10 V
Turn off time
t
off
—
300
—
ns
Storage time
t
stg
—
260
—
ns
I
C = IB1 = –IB2 = 20 mA,
V
CC = 5 V
Note:
1. The 2SC458 (K) is grouped by h
FE as follows.
BC
D
100 to 200
160 to 320
250 to 500
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