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參數(shù)資料
| 型號(hào)： | 2SC4898 |
| 廠商： | PANASONIC CORP |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) |
| 中文描述： | 5 A, 500 V, NPN, Si, POWER TRANSISTOR, TO-220D |
| 封裝： | TO-220D, 3 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 40K |
| 代理商： | 2SC4898 |
1
Power Transistors
2SC4898
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
I
Features
G
High-speed switching
G
High collector to base voltage V
CBO
G
Low collector to emitter saturation voltage V
CE(sat)
I
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
CP
I
C
P
C
T
j
T
stg
Ratings
1000
500
10
5
40
2
150
–55 to +150
Unit
V
V
A
A
W
C
C
T
C
=25
°
C
Ta=25
°
C
I
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 1000V, I
E
= 0
V
EB
= 9V, I
C
= 0
V
CE
= 5V, I
C
= 1A
I
C
= 3A, I
B
= 0.6A
V
CE
= 10V, I
C
= 0.5A, f = 1MHz
I
C
= 3A, I
B1
= 0.6A, I
B2
= – 0.6A,
V
CC
= 250V
min
20
typ
8
max
100
100
40
1
1.5
3
1.0
Unit
μ
A
μ
A
V
MHz
μ
s
μ
s
μ
s
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220D Full Pack Package
1
9.9
±
0.3
1
±
0
1
±
0
4
±
0
4.6
±
0.2
2.9
±
0.2
0.8
±
0.1
1.4
±
0.2
1.6
±
0.2
2
3
φ
3.2
±
0.1
2.6
±
0.1
0.55
±
0.15
2.54
±
0.3
5.08
±
0.5
3
±
0
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