參數(shù)資料
型號: 2SC4941
廠商: Shindengen Electric Manufacturing Company, Ltd.
英文描述: Switching Power Transistor(6A NPN)
中文描述: 開關(guān)功率晶體管(第6A NPN)的
文件頁數(shù): 1/9頁
文件大?。?/td> 411K
代理商: 2SC4941
6A NPN
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
RATINGS
SHINDENGEN
OUTLINE DIMENSIONS
Unit : mm
2SC4941
Case : ITO-3P
Switching Power Transistor
Absolute Maximum Ratings
Item
Symbol
Tstg
Tj
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
I
BP
P
T
Vdis
TOR
Conditions
Ratings
-55
~1
50
1
50
1
500
800
7
6
1
2
3
6
65
2
0.8(0.5)
Unit
V
V
V
A
Storage Temperature
Junction Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current DC
Collector Current Peak
Base Current DC
A
Base Current Peak
Total Transistor Dissipation
Dielectric Strength
Mounting Torque
W
kV
N
m
Terminals to case, AC
1
minute
(Recommended torque)
Electrical Characteristics (Tc=25
)
Item
Collector to Emitter Sustaining Voltage
Symbol
V
CEO
(sus)
V
CBO
I
CBO
I
CEO
I
EBO
h
FE
h
FEL
V
CE
(sat)
V
BE
(sat)
θ
jc
f
T
ton
ts
tf
Conditions
Ratings
Min 800
Min
1
500
Max 0.
1
Max 0.
1
Max 0.
1
Min
1
5
Min 7
Max 0.5
Max
1
.5
Max
1
.92
TYP 8
Max 0.5
Max 3.5
Max 0.3
Unit
V
I
C
= 0.2A
I
CB
=
1
mA
V
CB
=
1
200V
rated V
CEO
rated V
EBO
V
CE
= 5V, I
C
=
1
A
V
CE
= 5V, I
C
=
1
mA
I
C
= 3A
I
B
= 0.6A
Junction to case
V
CE
=
1
0V, I
C
= 0.6A
I
C
= 3A
I
B
1
= 0.6A, I
B2
=
1
.2A
R
L
= 85
Ω
, V
BB2
= 4V
Collector to Base Voltage
Collector Cutoff Current
mA
Emitter Cutoff Current
mA
DC Current Gain
Collector to Emitter Saturation Voltage
V
V
Base to Emitter Saturation Voltage
Thermal Resistance
Transition Frequency
Turn on Time
Storage Time
Fall Time
/W
MHz
μ
s
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SC4941-7100 功能描述:兩極晶體管 - BJT VCEO=800 IC=6 HFE=15 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SC4941-7112 功能描述:兩極晶體管 - BJT VCEO=800 IC=6 HFE=15 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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2SC4942-T1-AZ-AA3 制造商:Renesas Electronics Corporation 功能描述: