參數(shù)資料
型號: 2SC4953
廠商: PANASONIC CORP
元件分類: 功率晶體管
英文描述: Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
中文描述: 3 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
封裝: ROHS COMPLIANT, TO-220D-A1, 3 PIN
文件頁數(shù): 2/2頁
文件大?。?/td> 42K
代理商: 2SC4953
2
Power Transistors
2SC4953
I
C
— V
CE
I
C
— V
CE(sat)
h
FE
— I
C
f
T
— I
C
t
on
, t
stg
, t
f
— I
C
Area of safe operation (ASO)
Area of safe operation, reverse bias ASO
0
12
10
8
2
6
4
0
5.0
4.0
3.0
2.0
1.0
4.5
3.5
2.5
1.5
0.5
T
C
=25C
300mA
250mA
200mA
150mA
100mA
50mA
I
B
=500mA
Collector to emitter voltage V
CE
(V)
C
C
0
2.5
2.0
0.5
1.5
1.0
0
8
6
2
5
7
4
1
3
T
C
=–25C
25C
125C
I
C
/I
B
=5
Collector to emitter saturation voltage V
CE(sat)
(V)
C
C
0.01
Collector current I
C
(A)
1
10
0.1
0.003
0.3
3
0.03
3
10
30
300
100
V
CE
=5V
T
C
=125C
25C
–25C
F
F
0.01
0.03
0.1
0.3
1
0.1
100
10
1
0.3
3
30
V
=10V
f=1MHz
T
C
=25C
Collector current I
C
(A)
T
T
0
4.0
1.0
3.0
2.0
3.5
0.5
Collector current I
C
(A)
2.5
1.5
0.01
0.03
0.1
0.3
1
3
10
30
100
Pulsed t
=1ms
Duty cycle=1%
I
C
/I
B
=10(2I
B1
=–I
B2
)
V
CC
=200V
T
C
=25C
t
stg
t
f
t
on
S
o
,
s
,
f
μ
s
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
100
t=1ms
1s
10ms
I
CP
I
C
Non repetitive pulse
Ta=25C
Ta=85C
Collector to emitter voltage V
CE
(V)
C
C
0
800
200
600
400
700
100
500
300
0
4.0
3.0
1.0
2.5
3.5
2.0
0.5
1.5
I
C
/I
B
=5
L
coil
=100
μ
H
T
C
=25C
Collector to emitter voltage V
CE
(V)
C
C
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