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參數(shù)資料
| 型號(hào)： | 2SC4955-T1FB |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | MINIMOLD PACKAGE-3 |
| 文件頁(yè)數(shù)： | 3/7頁(yè) |
| 文件大?。?/td> | 94K |
| 代理商： | 2SC4955-T1FB |
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MOS FIELD EFFECT TRANSISTOR
2SK3899
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D17174EJ1V0DS00 (1st edition)
Date Published May 2004 NS CP(K)
Printed in Japan
2004
DESCRIPTION
The 2SK3899 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Super low on-state resistance
RDS(on)1 = 5.3 m
MAX. (VGS = 10 V, ID = 42 A)
RDS(on)2 = 6.5 m
MAX. (VGS = 4.5 V, ID = 42 A)
Low Ciss: Ciss = 5500 pF TYP.
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
60
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±84
A
Drain Current (pulse)
Note1
ID(pulse)
±336
A
Total Power Dissipation (TC = 25°C)
PT1
146
W
Total Power Dissipation (TA = 25°C)
PT2
1.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Single Avalanche Energy
Note2
EAS
245
mJ
Repetitive Avalanche Current
Note3
IAR
49.5
A
Repetitive Avalanche Energy
Note3
EAR
245
mJ
Notes 1. PW
≤ 10
s, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 30 V, RG = 25
, VGS = 20 → 0 V, L = 100 H
3. RG = 25
, Tch(peak) ≤ 150°C
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3899-ZK
TO-263 (MP-25ZK)
(TO-263)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC4955-T2FB | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC4955-T1FB-A | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC4955-T2FB-A | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC4955-T1FB-A | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC4955-T2FB | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC4957-A | 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:Trans GP BJT NPN 6V 0.03A 4-Pin Mini-Mold |
| 2SC4957-T1 | 制造商:NEC Electronics Corporation 功能描述: |
| 2SC4957-T1-A | 功能描述:RF TRANSISTOR NPN SOT-143 制造商:cel 系列:- 包裝:帶卷（TR） 零件狀態(tài):有效 晶體管類型:NPN 電壓 - 集射極擊穿（最大值）:6V 頻率 - 躍遷:12GHz 噪聲系數(shù)（dB，不同 f 時(shí)的典型值）:1.5dB @ 2GHz 增益:11dB 功率 - 最大值:180mW 不同?Ic，Vce?時(shí)的 DC 電流增益（hFE）（最小值）:75 @ 10mA，3V 電流 - 集電極（Ic）（最大值）:30mA 安裝類型:表面貼裝 封裝/外殼:TO-253-4，TO-253AA 供應(yīng)商器件封裝:SOT-143 標(biāo)準(zhǔn)包裝:3,000 |
| 2SC4959-T1 | 制造商:NEC Electronics Corporation 功能描述: |
| 2SC4960 | 功能描述:TRANS NPN 800VCEO 1A TOP-3F RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
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