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參數(shù)資料
| 型號(hào)： | 2SC5122 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 50 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | LEAD FREE, 2-5J1A, TO-92MOD, 3 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 110K |
| 代理商： | 2SC5122 |
2SC5122
2004-07-26
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5122
High-Voltage switching Applications
High breakdown voltage: VCEO = 400 V
Low saturation voltage: VCE (sat) = 0.4 V (typ.)
(IC = 20 mA, IB = 0.5 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
400
V
Collector-emitter voltage
VCEO
400
V
Emitter-base voltage
VEBO
7
V
DC
IC
50
Collector current
Pulse
ICP
100
mA
Base current
IB
25
mA
Collector power dissipation
PC
900
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 400 V, IE = 0
―
1
A
Emitter cut-off current
IEBO
VEB = 7 V, IC = 0
―
1
A
Collector-emitter breakdown voltage
V (BR) CEO
IC = 1 mA, IB = 0
400
―
V
hFE (1)
VCE = 5 V, IC = 1 mA
80
―
DC current gain
hFE (2)
VCE = 5 V, IC = 20 mA
100
―
300
Collector-emitter saturation voltage
VCE (sat)
IC = 20 mA, IB = 0.5 mA
―
0.4
1.0
V
Base-emitter voltage
VBE
VCE = 5 V, IC = 20 mA
―
0.7
1.0
V
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
―
4
―
pF
Marking
Unit: mm
JEDEC
TO-92MOD
JEITA
―
TOSHIBA
2-5J1A
Weight: 0.36 g (typ.)
C5122
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5122(F) | 制造商:Toshiba 功能描述:NPN |
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| 2SC5124 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors |
| 2SC5125 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR) |
| 2SC5127 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN triple diffusion planar type |
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