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參數(shù)資料
| 型號： | 2SC5122 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 50 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | LEAD FREE, 2-5J1A, TO-92MOD, 3 PIN |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 110K |
| 代理商： | 2SC5122 |
2SC5122
2004-07-26
2
C
olle
ct
or
cur
re
nt
I
C
(m
A)
Collector-emitter voltage VCE (V)
IC – VCE
C
olle
ct
or
cur
re
nt
I
C
(m
A)
Collector current IC (mA)
hFE – IC
D
C
cu
rre
nt
gai
n
h
FE
Collector current IC (mA)
VCE (sat) – IC
Col
lect
or
-e
m
itte
rs
a
tu
ra
tion
volta
g
e
V
CE
(s
at
)
(m
V)
Base-emitter voltage VBE (V)
IC – VBE
Ambient temperature Ta (°C)
PC – Ta
Safe Operating Area
C
olle
ct
or
cur
re
nt
I
C
(m
A)
Collector-emitter voltage VCE (V)
C
olle
ct
or
cur
re
nt
I
C
(m
A)
400
0
Common
emitter
Ta = 25°C
6
8
10
600
100
500
700
300
IB = 50 A
1 mA
200
4
2
10
20
30
40
50
800
900
Tc = 100°C
Common emitter
IC/IB = 5
280
120
160
200
240
25
80
25
10
20
50
40
30
0
40
0
1.0
0.2
0.4
0
120
240
80
40
160
200
0.6
0.8
Common emitter
VCE = 10 V
1
10
100
1
10
100
25
Tc = 100°C
0.1
3
30
25
Common emitter
VCE = 10 V
0
60
10
20
30
0
0.6
0.8
1.4
0.4
0.2
Tc = 100°C
25
1.0
1.2
40
50
IC max (pulsed)*
100 s*
100 ms*
*: Single nonrepetitive
pulse Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
1
3
10
300
3
5
1
50
30
100
1000
10
500
100
30
300
10 ms*
IC max (continuous)
VCEO max
DC operation
Ta = 25°C
1 ms*
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5122(F) | 制造商:Toshiba 功能描述:NPN |
| 2SC5122_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon NPN Triple Diffused Type |
| 2SC5124 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors |
| 2SC5125 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR) |
| 2SC5127 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN triple diffusion planar type |
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