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參數(shù)資料
| 型號： | 2SC5181-T1 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 中文描述： | npn型外延硅晶體管超超級迷你- MOLD的低噪聲微波功放包裝 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 50K |
| 代理商： | 2SC5181-T1 |
SILICON TRANSISTOR
2SC5181
FEATURES
Low current consumption and high gain
|S
21e
|
2
= 10.5 dB
TYP.
@ V
CE
= 2 V, I
C
= 7 mA, f = 2 GHz
|S
21e
|
2
= 9.0 dB
TYP.
@V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
Ultra Super Mini-Mold package
ORDERING INFORMATION
PART
NUMBER
QUANTITY
ARRANGEMENT
2SC5181
50 units/box
2SC5181-T1
3 000 units/reel
*
Contact your NEC sales representatives to order samples for
evaluation (available in batches of 50).
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
5
3
2
V
V
V
10
30
150
mA
mW
°
C
°
C
–65 to +150
Document No. P12105EJ2V0DS00 (2nd edition)
(Previous No. TC-2478)
Date Published November 1996 N
Printed in Japan
1994
DATA SHEET
NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE
FOR LOW-NOISE MICROWAVE AMPLIFICATION
1.6 ± 0.1
0.8 ± 0.1
3
2
1
1
1
0
0
0
0
0
–
+
0
–
+
0
–
+
0
8
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
PACKAGE DIMENSIONS
(Units: mm)
Embossed tape, 8 mm wide, pin No. 3
(collector) facing the perforation
Caution;
This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.
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| 2SC5182 | NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5182-T1 | NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5182-T2 | NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC518383R | SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5182 | 制造商:NEC 制造商全稱:NEC 功能描述:SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR |
| 2SC5182T1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 3V V(BR)CEO | 30MA I(C) | TO-236AB |
| 2SC5182-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5182-T2 | 制造商:NEC 制造商全稱:NEC 功能描述:NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5183 | 制造商:NEC 制造商全稱:NEC 功能描述:SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR |
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