| 型號(hào) | 廠商 | 描述 |
| 2sc5140 2 3 4 5 6 7 8 |
Hitachi,Ltd. | VHF / UHF wide band amplifier |
| 2sc5141 2 3 4 5 6 7 8 |
Hitachi,Ltd. | Silicon NPN Epitaxial |
| 2sc5147 |
Rohm CO.,LTD. | HIGH-VOLTAGE SWITCHING TRANSISTOR (POWER SUPPLY) ( 120V, 7A) |
| 2sc5161 2 3 4 |
Rohm CO.,LTD. | High Voltage Switching Transistor(400V, 2A) |
| 2sc3969 2 3 4 |
Rohm CO.,LTD. | High Voltage Switching Transistor(高電壓開關(guān)晶體管) |
| 2sc5177 2 3 4 5 6 7 8 9 10 11 12 |
NEC Corp. | NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2sc5178 2 3 4 5 6 7 8 9 10 11 12 |
NEC Corp. | NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2sc5178-t1 2 3 4 5 6 7 8 9 10 11 12 |
NEC Corp. | NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2sc5178-t2 2 3 4 5 6 7 8 9 10 11 12 |
NEC Corp. | NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2sc5179 2 3 4 5 6 7 8 9 10 11 12 |
NEC Corp. | NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2sc5179-t1 2 3 4 5 6 7 8 9 10 11 12 |
NEC Corp. | NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2sc5179-t2 2 3 4 5 6 7 8 9 10 11 12 |
NEC Corp. | NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2sc5180 2 3 4 5 6 7 8 |
NEC Corp. | ECONOLINE: RY & RX - Controllable Output- 1kVDC Isolation- No Heatsink Required- UL94V-0 Package Material- Toroidal Magnetics- No External Components- Fully Encapsulated- Efficiency to 70% |
| 2sc5181 2 3 4 5 6 7 8 |
NEC Corp. | ECONOLINE: RY & RX - Controllable Output- 1kVDC Isolation- No Heatsink Required- UL94V-0 Package Material- Toroidal Magnetics- No External Components- Fully Encapsulated- Efficiency to 70% |
| 2sc5181-t1 2 3 4 5 6 7 8 |
NEC Corp. | NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2sc5182 2 3 4 5 6 7 8 9 10 11 12 |
NEC Corp. | NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2sc5182-t1 2 3 4 5 6 7 8 9 10 11 12 |
NEC Corp. | NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2sc5182-t2 2 3 4 5 6 7 8 9 10 11 12 |
NEC Corp. | NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2sc518383r 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
NEC Corp. | SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR |
| 2sc5183 2 3 4 5 6 7 8 9 10 11 12 |
NEC Corp. | NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2sc5183-t1 2 3 4 5 6 7 8 9 10 11 12 |
NEC Corp. | NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2sc5183-t2 2 3 4 5 6 7 8 9 10 11 12 |
NEC Corp. | NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2sc5184 2 3 4 5 6 7 8 9 10 11 12 |
NEC Corp. | NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2sc5184-t1 2 3 4 5 6 7 8 9 10 11 12 |
NEC Corp. | NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2sc5184-t2 2 3 4 5 6 7 8 9 10 11 12 |
NEC Corp. | NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2sc5185 2 3 4 5 6 7 8 9 10 11 12 |
NEC Corp. | NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2sc5185-t2 2 3 4 5 6 7 8 9 10 11 12 |
NEC Corp. | NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2sc5185-t1 2 3 4 5 6 7 8 9 10 11 12 |
NEC Corp. | NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2sc5186 2 3 4 5 6 7 8 9 10 11 12 |
NEC Corp. | NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2sc5186-t1 2 3 4 5 6 7 8 9 10 11 12 |
NEC Corp. | NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2sc5191(ne68833) 2 3 4 5 6 7 8 9 10 11 12 |
NEC Corp. | Voltage Detectors in 4-Bump (2 x 2) Chip-Scale Package |
| 2sc5191 2 3 4 5 6 7 8 9 10 11 12 |
NEC Corp. | ECONOLINE: RY & RX - Controllable Output- 1kVDC Isolation- No Heatsink Required- UL94V-0 Package Material- Toroidal Magnetics- No External Components- Fully Encapsulated- Efficiency to 70% |
| 2sc5191-t1 2 3 4 5 6 7 8 9 10 11 12 |
NEC Corp. | ECONOLINE: RY & RX - Controllable Output- 1kVDC Isolation- No Heatsink Required- UL94V-0 Package Material- Toroidal Magnetics- No External Components- Fully Encapsulated- Efficiency to 70% |
| 2sc5191-t2 2 3 4 5 6 7 8 9 10 11 12 |
NEC Corp. | ECONOLINE: RY & RX - Controllable Output- 1kVDC Isolation- No Heatsink Required- UL94V-0 Package Material- Toroidal Magnetics- No External Components- Fully Encapsulated- Efficiency to 70% |
| 2sc5192 2 3 4 5 6 7 8 9 10 |
NEC Corp. | Microwave Low Noise, Low Distortion Amplifier NPN Transistor(微波低噪聲、放大器NPN晶體管) |
| 2sc5193-t1 2 3 4 5 6 7 8 9 10 11 12 |
NEC Corp. | MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD |
| 2sc5193-t2 2 3 4 5 6 7 8 9 10 11 12 |
NEC Corp. | ECONOLINE: RY & RX - Controllable Output- 1kVDC Isolation- No Heatsink Required- UL94V-0 Package Material- Toroidal Magnetics- No External Components- Fully Encapsulated- Efficiency to 70% |
| 2sc5193 2 3 4 5 6 7 8 9 10 11 12 |
NEC Corp. | Microwave Low Noise Amplifier NPN Silicon Transistor(微波低噪聲放大器NPN晶體管) |
| 2sc5194f-t2 2 3 4 5 6 7 8 9 10 |
NEC Corp. | Voltage Detectors in 4-Bump (2 x 2) Chip-Scale Package |
| 2sc5194-t1 2 3 4 5 6 7 8 9 10 |
NEC Corp. | ECONOLINE: RY & RX - Controllable Output- 1kVDC Isolation- No Heatsink Required- UL94V-0 Package Material- Toroidal Magnetics- No External Components- Fully Encapsulated- Efficiency to 70% |
| 2sc5194-t2 2 3 4 5 6 7 8 9 10 |
NEC Corp. | ECONOLINE: RY & RX - Controllable Output- 1kVDC Isolation- No Heatsink Required- UL94V-0 Package Material- Toroidal Magnetics- No External Components- Fully Encapsulated- Efficiency to 70% |
| 2sc5194 2 3 4 5 6 7 8 9 10 |
NEC Corp. | Microwave Low Noise Amplifier NPN Silicon Transistor(微波低噪聲放大器NPN晶體管) |
| 2sc5195-t1 2 3 4 5 6 7 8 9 10 |
NEC Corp. | MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
| 2sc5195 2 3 4 5 6 7 8 9 10 |
NEC Corp. | Microwave Low Noise Amplifier NPN Silicon Transistor(微波低噪聲放大器NPN晶體管) |
| 2sc5196 |
永盛國際集團(tuán) | ECONOLINE: RY-S_DCP - Internal SMD Technology- 1kVDC Isolation- Short Circuit Protection: Current Limit- UL94V-0 Package Material- Regulated Output- No External Components Required- Efficiency to 63% |
| 2sc5196 |
Toshiba Corporation | NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS) |
| 2sc5206 2 3 4 5 6 |
Hitachi,Ltd. | Silicon NPN Triple Diffused(三倍擴(kuò)散NPN晶體管) |
| 2sc5207a 2 3 4 5 |
Hitachi,Ltd. | SILICON NPN TRIPLE DIFFUSED PLANAR |
| 2sc5218 2 3 4 5 6 7 8 |
Hitachi,Ltd. | Silicon NPN Epitaxial |
| 2sc5219 2 3 4 5 6 |
Hitachi,Ltd. | Silicon NPN Triple Diffused Planar(三倍擴(kuò)散NPN晶體管) |