參數(shù)資料
型號(hào): 2SC5183-T2
廠商: NEC Corp.
英文描述: NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
中文描述: npn型外延硅晶體管中的4針mini -模低噪聲微波功放包裝
文件頁(yè)數(shù): 7/12頁(yè)
文件大?。?/td> 60K
代理商: 2SC5183-T2
7
2SC5183
V
CE
= 2 V, I
C
= 1 mA, Z
O
= 50
FREQUENCY
S11
S21
S12
S22
MHz
200.00
400.00
600.00
800.00
1000.00
1200.00
1400.00
1600.00
1800.z0
2000.00
2200.00
2400.00
2600.00
2800.00
3000.00
MAG
0.944
0.903
0.840
0.773
0.684
0.606
0.539
0.484
0.432
0.422
0.408
0.418
0.428
0.444
0.471
ANG
–16.2
–31.6
–47.7
–63.7
–79.5
–96.4
–112.9
–128.8
–144.8
–161.6
–175.8
169.6
156.9
146.3
135.0
MAG
3.536
3.412
3.270
3.130
2.932
2.693
2.503
2.298
2.104
1.968
1.807
1.717
1.619
1.527
1.427
ANG
165.1
151.1
137.7
123.8
111.7
100.0
89.5
79.2
70.6
62.3
54.9
47.8
41.4
34.3
27.9
MAG
0.039
0.074
0.108
0.133
0.154
0.172
0.181
0.181
0.183
0.184
0.187
0.189
0.188
0.199
0.196
ANG
79.8
68.9
60.6
51.5
43.3
36.6
30.9
26.2
21.3
18.9
16.4
14.3
12.2
13.9
13.5
MAG
0.983
0.953
0.911
0.853
0.797
0.735
0.675
0.628
0.585
0.553
0.526
0.488
0.467
0.446
0.419
ANG
–8.7
–17.1
–25.0
–32.6
–37.9
–44.3
–50.7
–54.5
–59.8
–63.6
–67.9
–72.5
–75.4
–81.4
–91.1
V
CE
= 2 V, I
C
= 3 mA, Z
O
= 50
FREQUENCY
S11
S21
S12
S22
MAG
0.827
0.713
0.582
0.476
0.381
0.322
0.285
0.258
0.248
0.263
0.276
0.300
0.337
0.353
0.381
MHz
200.00
400.00
600.00
800.00
1000.00
1200.00
1400.00
1600.00
1800.00
2000.00
2200.00
2400.00
2600.00
2800.00
3000.00
ANG
–25.9
–47.8
–67.5
–85.7
–103.9
–123.1
–141.8
–160.4
–178.5
165.2
152.1
142.8
133.1
125.5
115.9
MAG
9.104
7.914
6.749
5.790
4.988
4.304
3.812
3.399
3.026
2.776
2.523
2.368
2.218
2.095
1.935
ANG
156.0
136.1
120.1
106.1
95.3
85.7
77.4
69.8
63.2
56.6
50.7
45.1
39.8
33.7
27.9
MAG
0.037
0.068
0.088
0.103
0.118
0.125
0.137
0.148
0.162
0.168
0.182
0.192
0.206
0.222
0.225
ANG
77.0
59.6
56.1
51.5
45.6
43.7
39.8
41.5
39.1
37.1
35.0
33.1
31.3
29.5
25.9
MAG
0.943
0.831
0.731
0.632
0.555
0.501
0.445
0.408
0.370
0.339
0.324
0.292
0.273
0.252
0.228
ANG
–15.4
–28.1
–37.2
–44.0
–47.6
–52.6
–57.0
–61.2
–65.2
–69.6
–73.6
–78.0
–81.2
–86.9
–102.4
V
CE
= 2 V, I
C
= 5 mA, Z
O
= 50
FREQUENCY
S11
S21
S12
S22
MHz
200.00
400.00
600.00
800.00
1000.00
1200.00
1400.00
1600.00
1800.00
2000.00
2200.00
2400.00
2600.00
2800.00
3000.00
MAG
0.734
0.576
0.432
0.337
0.263
0.216
0.206
0.191
0.199
0.230
0.250
0.273
0.313
0.341
0.362
ANG
–32.7
–57.2
–77.6
–96.1
–116.6
–138.0
–160.4
–179.5
161.0
150.7
138.1
131.2
124.0
117.4
109.1
MAG
12.966
10.301
8.183
6.721
5.619
4.788
4.191
3.722
3.298
3.024
2.741
2.565
2.394
2.257
2.089
ANG
149.3
126.8
111.1
98.3
88.8
80.4
73.1
66.5
60.3
54.5
48.8
43.7
38.8
33.2
27.8
MAG
0.035
0.059
0.078
0.092
0.106
0.121
0.136
0.144
0.158
0.167
0.189
0.200
0.217
0.225
0.249
ANG
74.4
60.1
55.5
55.5
51.3
51.2
48.5
47.4
45.1
41.0
40.0
38.1
36.0
33.6
28.1
MAG
0.894
0.735
0.616
0.520
0.455
0.404
0.363
0.329
0.298
0.266
0.264
0.228
0.204
0.193
0.171
ANG
–20.4
–34.3
–42.1
–47.2
–50.3
–53.7
–58.4
–61.8
–67.4
–72.0
–75.7
–82.1
–86.1
–90.5
–112.3
相關(guān)PDF資料
PDF描述
2SC5184 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
2SC5184-T1 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
2SC5184-T2 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
2SC5185 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
2SC5185-T2 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SC5184 制造商:NEC 制造商全稱:NEC 功能描述:SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
2SC5184T1 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 3V V(BR)CEO | 30MA I(C) | SOT-323
2SC5184-T1 制造商:NEC 制造商全稱:NEC 功能描述:NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
2SC5184-T2 制造商:NEC 制造商全稱:NEC 功能描述:NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
2SC5185 制造商:NEC 制造商全稱:NEC 功能描述:NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION