參數(shù)資料
型號: 2SC5184-T1
廠商: NEC Corp.
英文描述: NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
中文描述: npn型外延硅晶體管超微型模低噪聲微波功放包裝
文件頁數(shù): 10/12頁
文件大小: 58K
代理商: 2SC5184-T1
10
2SC5184
V
CE
= 2 V, I
C
= 20 mA, Z
O
= 50
FREQUENCY
S11
S21
S12
S22
MHz
100.0000
200.0000
300.0000
400.0000
500.0000
600.0000
700.0000
800.0000
900.0000
1000.0000
1100.0000
1200.0000
1300.0000
1400.0000
1500.0000
1600.0000
1700.0000
1800.0000
1900.0000
2000.0000
MAG
0.474
0.354
0.270
0.213
0.173
0.146
0.129
0.116
0.104
0.097
0.093
0.091
0.090
0.089
0.091
0.094
0.095
0.100
0.106
0.106
ANG
–33.9
–57.5
–73.3
–85.2
–94.8
–105.1
–115.0
–124.7
–133.8
–143.0
–151.3
–159.0
–169.5
–176.4
177.3
170.6
165.4
160.1
156.6
150.5
MAG
27.070
20.499
15.719
12.575
10.387
8.873
7.714
6.794
6.117
5.522
5.083
4.649
4.346
4.044
3.797
3.565
3.378
3.222
3.080
2.922
ANG
147.2
127.1
115.1
107.5
101.9
97.6
93.9
91.0
88.4
85.2
83.4
81.0
79.0
77.1
75.6
73.8
71.8
70.2
68.4
67.1
MAG
0.018
0.031
0.043
0.054
0.064
0.074
0.084
0.095
0.106
0.116
0.128
0.137
0.148
0.159
0.169
0.179
0.190
0.200
0.210
0.219
ANG
76.5
74.3
72.8
71.2
72.6
73.1
72.7
72.0
72.5
72.4
71.7
71.1
70.9
70.5
69.5
68.9
68.2
67.6
66.9
66.3
MAG
0.805
0.624
0.501
0.424
0.376
0.337
0.312
0.294
0.279
0.266
0.257
0.250
0.241
0.234
0.229
0.224
0.218
0.216
0.210
0.204
ANG
–24.1
–36.4
–42.1
–44.2
–44.6
–44.9
–45.2
–44.9
–45.8
–44.9
–45.7
–46.1
–46.9
–47.2
–48.7
–49.5
–50.2
–50.7
–52.1
–52.9
相關PDF資料
PDF描述
2SC5184-T2 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
2SC5185 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
2SC5185-T2 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
2SC5185-T1 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
2SC5186 NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
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2SC5185-T1 制造商:NEC 制造商全稱:NEC 功能描述:NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION