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參數(shù)資料
| 型號(hào)： | 2SC5185-T1-FB |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | SUPER MINIMOLD PACKAGE-4 |
| 文件頁(yè)數(shù)： | 5/9頁(yè) |
| 文件大?。?/td> | 183K |
| 代理商： | 2SC5185-T1-FB |
Data Sheet PU10516EJ01V0DS
3
2SC5185
TYPICAL CHARACTERISTICS (TA = +25
°C, unless otherwise specified)
Collector
Current
I
C
(mA)
Collector to Emitter Voltage VCE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
DC
Current
Gain
h
FE
Collector Current IC (mA)
COLLECTOR CURRENT
DC CURRENT GAIN vs.
Gain
Bandwidth
Product
f
T
(GHz)
Collector Current IC (mA)
vs. COLLECTOR CURRENT
GAIN BANDWIDTH PRODUCT
Total
Power
Dissipation
P
tot
(mW)
Ambient Temperature TA (C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Reverse
Transfer
Capacitance
C
re
(pF)
Collector to Base Voltage VCB (V)
vs. COLLECTOR TO BASE VOLTAGE
REVERSE TRANSFER CAPACITANCE
Collector
Current
I
C
(mA)
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
Free Air
200
100
0
50
100
150
90 mW
0.6
0.5
0.4
0.3
0.2
0
1.0
2.0
3.0
4.0
5.0
f = 1 MHz
50
40
30
20
10
0
0.5
1.0
VCE = 2 V
25
20
15
10
5
0
1.0
2.0
3.0
200 A
180 A
160 A
140 A
120 A
100 A
80 A
60 A
40 A
IB = 20 A
500
200
100
10
20
50
VCE = 2 V
VCE = 1 V
1
2
5
10
20
50
100
16
1
2
5
10
20
100
14
12
10
8
6
4
2
VCE = 1 V
f = 2 GHz
VCE = 2 V
30
Remark The graphs indicate nominal characteristics.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5185-T2 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5186 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5186(NE68719) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Discrete |
| 2SC5186T1 | 制造商:NEC 功能描述:New |
| 2SC5186-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
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