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參數(shù)資料
| 型號： | 2SC5185-T1-FB |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | SUPER MINIMOLD PACKAGE-4 |
| 文件頁數(shù)： | 6/9頁 |
| 文件大?。?/td> | 183K |
| 代理商： | 2SC5185-T1-FB |
Data Sheet PU10516EJ01V0DS
4
2SC5185
Collector Current IC (mA)
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
Insertion
Power
Gain
|S
21e
|2
(dB)
Collector Current IC (mA)
NOISE FIGURE vs.
COLLECTOR CURRENT
Noise
Figure
NF
(dB)
14
1
2
5
10
20
100
12
10
8
6
4
VCE = 1 V
f = 2 GHz
30
4
1
2
5
10
20
100
3
2
1
0
VCE = 1 V
f = 2 GHz
VCE = 2 V
Remark The graphs indicate nominal characteristics.
S-PARAMETERS
S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form
(S2P) that enables direct import to a microwave circuit simulator without keyboard input.
Click here to download S-parameters.
[RF and Microwave]
→ [Device Parameters]
URL http://www.ncsd.necel.com/
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| 2SC5187T-TD | 1500 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-243 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5185-T2 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5186 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5186(NE68719) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Discrete |
| 2SC5186T1 | 制造商:NEC 功能描述:New |
| 2SC5186-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
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