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參數(shù)資料
| 型號(hào)： | 2SC5185 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 中文描述： | npn型外延硅晶體管超微型模低噪聲微波功放包裝 |
| 文件頁(yè)數(shù)： | 2/12頁(yè) |
| 文件大?。?/td> | 60K |
| 代理商： | 2SC5185 |
2
2SC5185
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS
Collector Cutoff Current
I
CBO
100
nA
V
CB
= 5 V, I
E
= 0
Emitter Cutoff Current
I
EBO
100
nA
V
EB
= 1 V, I
C
= 0
DC Current Gain
h
FE
70
140
V
CE
= 2 V, I
C
= 20 mA
*1
Insertion Power Gain (1)
|S
21e
|
2
8
11
dB
V
CE
= 2 V, I
C
= 20 mA,
f = 2 GHz
Insertion Power Gain (2)
|S
21e
|
2
7.5
9
dB
V
CE
= 1 V, I
C
= 10 mA,
f = 2 GHz
Noise Figure (1)
NF
1.3
2.0
dB
V
CE
= 2 V, I
C
= 3 mA,
f = 2 GHz
Noise Figure (2)
NF
1.3
2.0
dB
V
CE
= 1 V, I
C
= 3 mA,
f = 2 GHz
Gain Bandwidth Product (1)
f
T
10
13
GHz
V
CE
= 2 V, I
C
= 20 mA,
f = 2 GHz
Gain Bandwidth Product (2)
f
T
8
11
GHz
V
CE
= 1 V, I
C
= 10 mA,
f = 2 GHz
Feed-Back Capacitance
C
re
0.3
0.6
pF
V
CB
= 2 V, I
E
= 0,
f = 1 MHz
*2
*1
*2
Measured with pulses: Pulse width
≤
350
μ
s, duty cycle
≤
2 %, pulsed.
Measured with a three-terminal bridge. The emitter and case terminal are connected to the guard terminal
of the bridge.
h
FE
Class
Class
FB
Marking
T86
h
FE
70 to 140
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5185(NE68718) | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:Discrete |
| 2SC5185T1 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | NPN | 3V V(BR)CEO | 30MA I(C) | SOT-343R |
| 2SC5185-T1 | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5185-T2 | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5186 | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
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