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參數(shù)資料
| 型號： | 2SC5193 |
| 廠商： | NEC Corp. |
| 英文描述： | Microwave Low Noise Amplifier NPN Silicon Transistor(微波低噪聲放大器NPN晶體管) |
| 中文描述： | 微波低噪聲放大器NPN硅晶體管（微波低噪聲放大器npn型晶體管） |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 55K |
| 代理商： | 2SC5193 |
DATA SHEET
SILICON TRANSISTOR
2SC5193
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
COMPACT MINI MOLD
Document No. P10396EJ2V1DS00 (1st edition)
Date Published March 1997 N
Printed in Japan
1994
FEATURES
Low Voltage Operation, Low Phase Distortion
Low Noise
NF = 1.5 dB TYP. @ V
CE
= 3 V, I
C
= 7 mA, f = 2 GHz
NF = 1.7 dB TYP. @ V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
Large Absolute Maximum Collector Current
I
C
= 100 mA
Compact Mini Mold Package
EIAJ: SC-70
ORDERING INFORMATION
PART
NUMBER
QUANTITY
PACKING STYLE
2SC5193-T1
3 Kpcs/Reel
Embossed tape 8 mm wide.
Pin 3 (collector) face to perforation side of the tape.
2SC5193-T2
3 Kpcs/Reel
Embossed tape 8 mm wide.
Pin 1 (Emitter), Pin 2 (Base) face to perforation side
of the tape.
Remark
If you require an evaluation sample, please contact an NEC
Sales Representative. (Unit sample quantity is 50 pcs.)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
PARAMETER
SYMBOL
RATING
UNIT
Collector to Base Voltage
V
CBO
9
V
Collector to Emitter Voltage
V
CEO
6
V
Emitter to Base Voltage
V
EBO
2
V
Collector Current
I
C
100
mA
Total Power Dissipation
P
T
150
mW
Junction Temperature
T
j
150
C
Storage Temperature
T
stg
65 to +150
C
This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.
PACKAGE DRAWING
(Units: mm)
1.25±0.1
2
1
3
Marking
PIN CONNECTIONS
1.
2.
3.
Collector
Emitter
Base
2.1±0.1
2
0
0
0
0
0
0
+
0
0
+
0
0
+
0
T
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC5194F-T2 | Voltage Detectors in 4-Bump (2 x 2) Chip-Scale Package |
| 2SC5194-T1 | ECONOLINE: RY & RX - Controllable Output- 1kVDC Isolation- No Heatsink Required- UL94V-0 Package Material- Toroidal Magnetics- No External Components- Fully Encapsulated- Efficiency to 70% |
| 2SC5194-T2 | ECONOLINE: RY & RX - Controllable Output- 1kVDC Isolation- No Heatsink Required- UL94V-0 Package Material- Toroidal Magnetics- No External Components- Fully Encapsulated- Efficiency to 70% |
| 2SC5194 | Microwave Low Noise Amplifier NPN Silicon Transistor(微波低噪聲放大器NPN晶體管) |
| 2SC5195-T1 | MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5193(NE68830) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Discrete |
| 2SC5193-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD |
| 2SC5193-T2 | 制造商:NEC 制造商全稱:NEC 功能描述:MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD |
| 2SC5194 | 制造商:NEC 制造商全稱:NEC 功能描述:MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
| 2SC5194(NE68818) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Discrete |
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